Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors

Wei Zhong,Ruohe Yao,Yuan Liu,Linfeng Lan,Rongsheng Chen

DOI: https://doi.org/10.1109/ted.2020.3004420

IF: 3.1

2020-08-01

IEEE Transactions on Electron Devices

Abstract:To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs), a surface passivation method utilizing ${n}$ -octyltriethoxysilane (OTES) self-assembled monolayers (SAMs) is developed. The electrical characteristics of the developed transistors indicate that device performance can be enhanced upon OTES passivation, exhibiting high mobility (~19.4 cm² V⁻¹s⁻¹), a steep subthreshold slope (~90 mV/dec), near-zero threshold voltage (~0.6 V), and high ON– OFF current ratio ( $sim 7.9times 10^{{{9}}}$ ). The passivation layer can effectively improve the stability of flexible ITZO TFTs even under positive bias stress (PBS) and negative bias stress (NBS), and only 0.8/1.3 V threshold voltage shifts are shown after PBS/NBS. In addition, the OTES-passivated transistors exhibit good mechanical reliability and maintain its electrical characteristics during the 10-k bending period, without drastic decline. These results demonstrate that the SAM passivation method is suitable for the fabrication of flexible high-performance metal–oxide electronic devices.

engineering, electrical & electronic,physics, applied