Abstract:4H Silicon carbide (SiC) is widely recognized as one of the most advanced wide bandgap semiconductors used in the production of high-efficiency power electronic devices. Impurities play a crucial role in achieving the desired electrical properties in 4H-SiC, yet the understanding of impurities in this material remains limited. In this study, first-principles formation-energy calculations were employed to establish a comprehensive database of formation-energy diagrams for impurities in 4H-SiC. This database includes valuable information on site preference, lattice distortion, solubility, and charge transition levels (CTLs) of the impurities. The site preference for each impurity is closely related to factors such as the Fermi energy, chemical potential, and the impurity species itself. To assess the lattice distortion caused by each impurity, a comparison was made between the volume changes before and after doping. Moreover, the solubility of each impurity was determined using the detailed balance theory, thereby enabling a direct measure of the maximum impurity concentration achievable in the material. Based on the CTLs, the impurities in 4H-SiC were classified into four categories: n-type impurities, p-type impurities, amphoteric impurities, and non-electroactive impurities. This comprehensive property database for impurities in 4H-SiC provides valuable insights for tailoring the material properties through controlled doping, thereby ultimately leading to enhanced performance of power electronic devices. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Kick-out Diffusion of Al in 4H-Sic: an Ab Initio Study

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions

Compensation of p-type doping in Al-doped 4H-SiC

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Theoretical Study on the Improvement of the Doping Efficiency of Al in 4H-Sic by Co-Doping Group-Ivb Elements

Normally-off trench JFET technology in 4H silicon carbide

Anisotropic Hole Drift Velocity in 4H-SiC

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells

A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Heterojunctions Of Solid C70 And Crystalline Silicon - Rectifying Properties And Barrier Heights

Understanding the Electronic Transport of Al-Si and Al-Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy

Photoelectrical characterization of heavily-doped p-SiC Schottky contacts

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Current Transport Studies of Zno/P-Si Heterostructures Grown by Plasma Immersion Ion Implantation and Deposition