Abstract:van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intralayer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. With the thickness becoming thinner, the competition between the surface energy, depolarization field, and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2 S6 single crystals is reported, whereas below a critical thickness between 90 and 100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, these behaviors are ascribed to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. These findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.

Interface-Tuning of Ferroelectricity and Quadruple-Well State in CuInP 2 S 6 via Ferroelectric Oxide

Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide

Origin of Versatile Polarization State in CuInP2S6

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Unconventional out-of-plane domain inversion via in-plane ionic migration in a van der Waals ferroelectric

Room-temperature Ferroelectricity in CuInP2S6 Ultrathin Flakes

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Van der Waals layered ferroelectric CuInP2S6: Physical properties and device applications

Realization of Sextuple Polarization States and Interstate Switching in Antiferroelectric CuInP2S6

Effect of chemical intercalation on ferroelectricity in van der Waals layered CuInP2S6

Thickness-Dependent In-Plane Polarization and Structural Phase Transition in Van Der Waals Ferroelectric CuInP2 S6.

Cu + Migration and Resultant Tunable Rectification in CuInP 2 S 6

Tunable interface states driven by ferroelectric polarization discontinuity in BiFeO<sub>3</sub>-based superlattice

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub>

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub> (Adv. Mater. 38/2023)

Cu<SUP>+</SUP> Migration and Resultant Tunable Rectification in CuInP<sub>2</sub>S<sub>6</sub>

Reducing Threshold of Ferroelectric Domain Switching in Ultrathin Two-Dimensional CuInP2S6 Ferroelectrics Via Electrical-Mechanical Coupling.

Origin of versatile polarization state in CuInP 2 S 6

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP2S6 (Adv. Mater. 38/2023)

Cyclic Ferroelectric Switching and Quantized Charge Transport in CuInP$_2$S$_6$