Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)

Interface engineering of ferroelectricity in thin films of thiophosphate A B P 2 X 6 ( A = Cu , Ag ; B = In , Bi , Cr , V ; X = S , Se )

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Switchable Metal-to-half-metal Transition at the Semi-Hydrogenated Graphene/ferroelectric Interface.

Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide

Interface-layer-assisted reliable ferroelectricity in BiFeO 3 thin films by chemical solution deposition

Interface engineering in ferroelectrics: From films to bulks

Chemical and interfacial design in the visible-light-absorbing ferroelectric thin films

Interface Dipole Effect on Thin Film Ferroelectric Stability: First-Principles and Phenomenological Modeling

Off-plane Polarization Ordering in Metal Chalcogen Diphosphates from Bulk to Monolayer

Interface Engineering Of Domain Structures In Bifeo3 Thin Films

Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures

Electrical control of metal–insulator transition and magnetism in asymmetric multiferroic InCrX3 (X = S, Se) monolayers

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

How a Ferroelectric Layer Can Tune a Two-Dimensional Electron Gas at the Interface of LaInO3 and BaSnO3: A First-Principles Study

Interface-Controlled Ferroelectricity at the Nanoscale

Interface engineering for facile switching of bulk-strong polarization in Si-compatible vertical superlattices

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Unusual Ferroelectricity in Two-Dimensional Perovskite Oxide Thin Films.

First-principles Study of Ferroelectricity, Antiferroelectricity, and Ferroelasticity in Two-Dimensional Γ -Alooh