Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Ferri-ionic Coupling in CuInP$_2$S$_6$ Nanoflakes: Polarization States and Controllable Negative Capacitance

Ferri-ionic coupling in nanoflakes: Polarization states and controllable negative capacitance

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6

Strain-polarization coupling in the low-dimensional Van der Waals Ferrielectrics

Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions

Stress-Induced Transformations of Polarization Switching in CuInP$_2$S$_6$ Nanoparticles

Unique features of polarization in ferroelectric ionic conductors

On the negative capacitance in ferroelectric heterostructures

Reducing Threshold of Ferroelectric Domain Switching in Ultrathin Two-Dimensional CuInP2S6 Ferroelectrics Via Electrical-Mechanical Coupling.

Cu + Migration and Resultant Tunable Rectification in CuInP 2 S 6

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub>

Competing charge transfer and screening effects in two-dimensional ferroelectric capacitors

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Effect of surface ionic screening on polarization reversal scenario in ferroelectric thin films: crossover from ferroionic to antiferroionic states

Interface-Tuning of Ferroelectricity and Quadruple-Well State in CuInP 2 S 6 via Ferroelectric Oxide