Abstract:The 5G revolution have brought about the huge impact for the communication industry which produces a series of innovative technologies, such as Sub 6Ghz and millimmeter wave (mmWave) 28Ghz spectrum, beam forming, multiconnectivity and edge computing are widely applied in the 5G generation for high speed data transmission and low latency purpose. Furthermore, system in package (SiP) module design and assembly technology plays an key role in IOT, antenna in package (AiP) and RF module applicatons, compare to the tranditional SiP design, the Electromagnetic Interference (EMI) shielding technology is the important factor to influence the shielding effectiveness (SE). In this paper, the EMI coating and partition technology in SiP module will be discussed and analyzed in comformal and compartment shielding methold individually. In this study, Test Veihcle is designed with RF module with EMI shielding and partition technology. In the first part, the various sputter coating material and thickness are demonstrated by Near-Field Scanner meathold, compare to the conventional Cu coating layer, the Cu/Ferrite coating layer have improved about 10 dB SE at 6Ghz high frequency and 30 dB SE at 3MHz low frequency range sucessfully. In addition, the comparison between metal frame and epoxy paste partition shieldig capability resutls are discussed as well in this paper. Thus, the fillng material of metal frame, paste epoxy and SUS+Cu are demonstrated 40 dB SE improvement at 28GHz mmWave frequency by vector network analyzer (VNA) measurement. All of above physical phenomenon will be discussed in detail in the following sections. Finally, the reliability verification of EMI shielding on advanced SiP module will utilize standard JEDEC test condition including Temperature Cycle Test (TCT), High Temperature Storage (HTS), unbias-high accelerated stress test (u-HAST) results to verify the package structure. By employing this SiP structure with EMI shielding technology, the Shielding effectiveness (SE) are improved obviusly in both comformal and compartment structure. Undoubtedly, SiP with EMI shielding structure is absolutely the most innovative technology in the 5G generation.

EM Modeling and Measurement of 3D-RDL Interconnects in LGA package for 5G RF SIP Applications

Methods and designs for improving the signal integrity for 3D electrical interconnects in high performance IC packaging

Modeling and Measurement of A Novel Shielding Design in Silicon Interposer

Three-dimensional circuit integration based on self-synchronized RF-interconnect using capacitive coupling

Two 10Gb/s/pin Low-Power Interconnect Methods for 3D ICs

FDTD modeling of 3D metal-LTCC structures for RF(MM)ICs

Low-loss Through Silicon Vias (tsvs) and Transmission Lines for 3D Optoelectronic Integration

A Novel 3-D Frequency Selective Structure for Radiation Leakage Suppression in Sub-6G Highly Integrated Package

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

EMIB Packages Simulation for Heterogeneous Integration of GaN and Si High-Power Devices

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Design, Fabrication, and Radio Frequency Property Evaluation of a Through-Glass-via Interposer for 2.5D Radio Frequency Integration

Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

Design and Simulation to Reduce the Crosstalk of Ultra-Fine Line Width/space in the Redistribution Layer

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

EMI Shielding Technology in 5G RF System in Package Module

Process Development and Characterization of BCB-based Redistribution Layer (RDL) for Silicon Interposer Application

Design and Implementation of Broadband Hybrid 3-dB Couplers with Silicon-Based IPD Technology

Equivalent Circuit and Parasitic Parameter Extraction of 3D Comb-Like Redistribution Layer Applied for FOWLP