Abstract:In this paper, a high-resistivity silicon (HR-Si) interposer integrated with through-silicon via (TSV) electrically grounded coplanar waveguide (CPW) line is presented for 2.5-D/3-D heterogeneous integration of radio frequency (RF) microelectronics devices. In addition, design of TSV interconnection composed of two coaxial ladder-hollow-annular Cu (copper) TSVs of different diameters is utilized to maintain a sufficient freedom for strict standard cleaning to avoid Si resistivity degradation. The formation of the coaxial ladder TSV structure is more beneficial to the subsequent plating process because it reduces the aspect ratio of TSV vias. Hollow-annular Cu TSV is manufactured in order to reduce the problem of mismatch in coefficient of thermal expansion among TSV's constituent materials. A layer of Au (aurum) film is utilized to passivate the exposed Cu surface of Si interposer. Au is widely used in III-V groups' devices because of the good compatibility with photonic integrated circuits, conductivity, and corrosion resistance. HR-Si interposer with TSV grounded CPW line and test structure is fabricated and characterized. With the monitoring test results, it can be found that it changes little in the resistivity of Si substrate, though the whole process, which is a basic requirement for RF performance. RF property test results show that the insertion loss is about -0.20 dB/mm at 10 GHz for the presented TSV grounded CPW line and -0.02 dB per TSV. These test results are better than the traditional design. To verify its applicability to 2.5-D/3-D heterogeneous integration, RF microelectronics die is assembled on TSV interposer and tested, and the test results prove that it works properly.

Three-dimensional circuit integration based on self-synchronized RF-interconnect using capacitive coupling

Two 10Gb/s/pin Low-Power Interconnect Methods for 3D ICs

RF Interconnections for Paper Electronics

RF-interconnect for multi-Gb/s digital interface based on 10 GHz RF-modulation in 0.18 /spl mu/m CMOS

An RF/baseband FDMA-interconnect Transceiver for Reconfigurable Multiple Access Chip-to-chip Communication

Advanced RF/baseband Interconnect Schemes for Inter- and Intra-Ulsi Communications

A Compact 2-18Ghz Ultra-Wideband Frequency-conversion T/R Module Based on a 3D Heterogeneous Integrated Process

Design and Fabrication of a TR Microsystem in Ka Band with Si-Based 3D Heterogeneous Integration

An Ultra Broadband Passive Vector Modulator Phase Shifter

Capacitive coupling analysis of TSV array in 3D packaging

A 2.5D Integrated L Band Receiver Based on High Resistivity Si Interposer

Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

A 0.5-4Ghz Full-Duplex Receiver with Multi-Domain Self-Interference Cancellation Using Capacitor Stacking Based Second-Order Delay Cells in RF Canceller

Electrical Characterization of RF TSV for 3D Multi-Core and Heterogeneous ICs

Three-Dimensional Interconnection With Magnetically Coupled Transition for W-Band Integration Applications

Fabrication and RF Property Evaluation of High-Resistivity Si Interposer for 2.5-D/3-D Heterogeneous Integration of RF Devices

Inductively-Coupled High-Speed Interconnects of 3D-Integrated CMOS Image Sensors

A 0.18 Um Cmos Reconfigurable Digital Baseband Transceiver With 2fsk For Rfid

Synchronous Chip-to-Chip Communication with a Multi-Chip Resonator Clock Distribution Network

Design and Implementation of a Dual-Band RF SiP Module Based on Package-on-Package Technology