Abstract:Bias non-conservation characteristics of radio-frequency noise mechanism of 40-nm n-MOSFET are observed by modeling and measuring its drain current noise. A compact model for the drain current noise of 40-nm MOSFET is proposed through the noise analysis. This model fully describes three kinds of main physical sources that determine the noise mechanism of 40-nm MOSFET, i.e., intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes. The most important findings of the bias non-conservative nature of noise mechanism of 40-nm n-MOSFET are as follows. (i) In the strong inversion region, the suppressed shot noise is weakly affected by the thermal noise of gate parasitic resistance. Therefore, one can empirically model the channel excess noise as being like the suppressed shot noise. (ii) In the middle inversion region, it is almost full of shot noise. (iii) In the weak inversion region, the thermal noise is strongly frequency-dependent, which is almost controlled by the capacitive coupling of substrate parasitic resistance. Measurement results over a wide temperature range demonstrate that the thermal noise of 40-nm n-MOSFET exists in a region from the weak to strong inversion, contrary to the predictions of suppressed shot noise model only suitable for the strong inversion and middle inversion region. These new findings of the noise mechanism of 40-nm n-MOSFET are very beneficial for its applications in ultra low-voltage and low-power RF, such as novel device electronic structure optimization, integrated circuit design and process technology evaluation.

Theory of 1/fnoise currents in n+pdiodes, n+pphotodiodes, and Schottky diodes

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors

Dark Current Transport and Junction Capacitance Mechanism in InP One-Side Junction Photodiodes

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Frequency-dependent Current Noise in Quantum Heat Transfer: A Unified Polaron Calculation.

Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs

Theoretical Investigation of Current-Noise Characteristics in Finite Semiconductor Superlattice with Correlated Thickness Randomness

Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

Observation of Nonconservation Characteristics of Radio Frequency Noise Mechanism of 40-Nm N-Mosfet

The 1/f Noise Characteristics of In0.83Ga0.17As Photodiodes with SiNx Passivation Films Fabricated by Two Different Techniques

1/f noise near the free surface of a semiconductor

Low-Frequency Noise of Nc-Si:H/C-Si Heterojunction Diodes

Analysis of Channel Current Noise in Small Nanoscale Metal Oxide Semiconductor Field Effect Transistors

Drift-diffusion theory of symmetrical double-junction diodes

Quantum Noise Theory for Quantum Transport Through Nanostructures

General drift-diffusion theory of the current density in Schottky diodes

Barrier height inhomogeneity and origin of 1/f-noise in topological insulator-based photo-detector

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

First-order Coherent Resonant Tunneling Through an Interacting Coupled-Quantum-dot Interferometer: Generic Quantum Rate Equations and Current Noise

Chaotic Dynamics in Terahertz-Driven Semiconductors with Negative Effective Mass