Abstract:Topological insulators (TIs) with symmetry-protected surface states, offer exciting opportunities for next-generation photonic and optoelectronic device applications. The heterojunctions of TIs and semiconductors (e.g. Si, Ge) have been observed to excellent photo-responsive characteristics. However, the realization of high-frequency operations in these heterojunctions can be hindered by unwanted 1/f (or Flicker) noise and phase noise. Therefore, an in-depth understanding of 1/f noise figures becomes paramount for the effective utilization of such materials.Here we report optoelectronic response and 1/f noise characteristics of a p-n diode fabricated using topological insulator, Bi2Se3 and silicon for potential photo-detector. Through meticulous temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements, we ascertain crucial parameters like barrier height, ideality factor, and reverse saturation current of the photodetector. The low-frequency 1/f conductance noise spectra suggest a significant presence of trap states influencing the optoelectronic transport properties. The forward noise characteristics exhibit typical 1/f features, having a uni-slope across four decades of frequency, suggesting a homogeneous distribution of barrier height. The spectral and photocurrent-dependent responses show the power law behavior of noise level on photon flux. The hybrid heterojunction demonstrates excellent photo-response and reasonably low noise level, promising signatures for the room-temperature visible photodetector applications.

1/f noise near the free surface of a semiconductor

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1/f Noise in Thin Films of Topological Insulator Materials

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1/f noise spectroscopy and noise tailoring of nanoelectronic devices

1/f noise in quantum nanoscience

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Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications

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Study of 1/f Noise in Graphene Based Field-Effect-Transistors

Low-Frequency Electronic Noise Spectroscopy of Quasi-2D van der Waals Antiferromagnetic Semiconductors

Cause of 1/f Noise: The Surge of Background Energy

Barrier height inhomogeneity and origin of 1/f-noise in topological insulator-based photo-detector

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Theory of 1/fnoise currents in n+pdiodes, n+pphotodiodes, and Schottky diodes

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Noise in Graphene Super Lattices Grown on Hexagonal Boron Nitride

1/F Noise in Si and Si/sub 0.7/ge/sub 0.3/ Pmosfets

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control