Abstract:This research attempts to unravel the underlying mechanism and explain the sub‐thermionic behavior observed in the Schottky barrier Field Effect Transistor at low drain biases. The authors demonstrate that the sub‐thermionic transport arises due to the change in the tunneling barrier shape from step‐like to triangular in the off‐state. At higher gate biases (on‐state), drift current due to the capacitively induced mobile charge carriers dominates. Boltzmann carrier statistics restrict the sub‐threshold swing (SS ≥ 60 mVdec–1) and, consequently, the supply voltage (≈ 1 V) of the thermionic transistor. This primary bottleneck results in rapidly increasing power consumption, heating, and associated reliability/scalability challenges as more devices are packed into a small footprint. Despite significant efforts from the device community, a suitable sub‐thermionic alternative is yet to emerge. In this work, an attempt is made to understand the physics of Schottky barrier FETs demonstrating SS < 60 mVdec–1, as evident in some experimental results. Employing the in‐house TCAD tool, the electrostatic potential in the device is accurately modeled with the sweeping gate bias. Next, the Tsu–Esaki model is used to compute the tunneling current. The analysis shows that the steep SS results from an abrupt change in the tunneling barrier profile, from a step‐like to a triangular‐like. However, in the ON regime, the drift component begins to dominate the transfer characteristics. Thus, the subtle interplay between the drift and tunneling components of transport leads to SS < 60 mVdec–1 in OFF‐state with improved Ion in ON‐state. Finally, using the calibrated model, the performance metrics of an all‐2D material‐based CMOS inverter operating at a low VDD ≈ 0.6 V are projected.

General drift-diffusion theory of the current density in Schottky diodes

Drift-diffusion theory of symmetrical double-junction diodes

Thermal Activation of Current in an Inhomogeneous Schottky Diode with A Gaussian Distribution of Barrier Height

Numerical simulation of tunneling current in GaN Schottky diodes

Drift-diffusion current in organic diodes

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

3D Finite Element Modeling of Current Densities in Semiconductor Transport with Impact Ionization

Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model

Electrostatic properties and current transport of two-dimensional Schottky barrier diode

Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Insights into Sub‐Thermionic Transport in Schottky Barrier FETs

Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials

On-state Behaviour of Diamond Schottky Diodes

A Current–Voltage Model for Double Schottky Barrier Devices

Impact of Surface States in Graphene/p-Si Schottky Diodes

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Optimized quantum drift diffusion model for a resonant tunneling diode

Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode