Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Yangyang Wang,Shiqi Liu,Qiuhui Li,Ruge Quhe,Chen Yang,Ying Guo,Xiuying Zhang,Yuanyuan Pan,Jingzhen Li,Han Zhang,Lin Xu,Bowen Shi,Hao Tang,Ying Li,Jinbo Yang,Zhiyong Zhang,Lin Xiao,Feng Pan,Jing Lu
DOI: https://doi.org/10.1088/1361-6633/abf1d4
2021-04-27
Reports on Progress in Physics
Abstract:Abstract Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal–2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.
physics, multidisciplinary