Abstract:Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as compliant growth substrates, Ge$_{1-x}$Sn$_{x}$ alloys with a Sn content of 18\% exhibiting a high composition uniformity and crystallinity along a few micrometers in the nanowire growth direction were demonstrated. The measured bandgap energy of the obtained Ge/Ge$_{0.82}$Sn$_{0.18}$ core/shell nanowires is 0.322 eV enabling the mid-infrared photodetection with a cutoff wavelength of 3.9 $\mu$m. These narrow bandgap nanowires were also integrated into top-gated field-effect transistors and phototransistors. Depending on the gate design, these demonstrated transistors were found to exhibit either ambipolar or unipolar behavior with a subthreshold swing as low as 228 mV/decade measured at 85 K. Moreover, varying the top gate voltage from -1 V to 5 V yields nearly one order of magnitude increase in the photocurrent generated by the nanowire phototransistor under a 2330 nm illumination. This study shows that the core/shell nanowire architecture with a super thin core not only mitigates the challenges associated with strain buildup observed in thin films but also provides a promising platform for all-group IV mid-infrared photonics and nanoelectronics paving the way toward sensing and imaging applications.

High detectivity Ge photodetector at 940?nm achieved by growing strained-Ge with a top Si stressor

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Planar GeSn photodiode for high-detectivity photodetection at 1550 nm

Integration of Tensile-Strained Ge P-I-n Photodetector on Advanced CMOS Platform

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array

Ge Quantum Dot Infrared Photo-Detector

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Ultrahigh Sensitive Phototransistor Based on MoSe2/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection

Si-based Ge Quantum Dot Infrared Photodetectors

Mid-infrared top-gated Ge/Ge$_{0.82}$Sn$_{0.18}$ nanowire phototransistors