Abstract:High-perfonnance GeSn multiple-quantum-well (MQW) photodiode is demonstrated on a 200 mm Ge-on-insulator (GeOI) photonics platform for the first time. Both GeSn MQW active layer stack and Ge layer (top Ge layer of GeOI after bonding) were grown using a single epitaxy step on a standard (001)-oriented Si substrate (donor wafer) using a reduced pressure chemical vapor deposition (RPCVD). Direct wafer bonding and layer transfer technique were then employed to transfer the GeSn MQW device layers and Ge layer to a 200 mm SiO2-tenninated Si handle substrate. The surface illuminated GeSn MQW photodiode realized on this platform exhibits an ultra-low leakage current density of 25 mA/cm(2) at room temperature and an enhanced photo sensitivity at 2 mu m of 30 mA/W as compared to a GeSn MQW photodiode on Si at 2 mu m. The underlying GeOI platform enables monolithic integration of a complete suite of photonics devices operating at 2 mu m band, including GeOI strip waveguides, grating couplers, micro-ring modulators, Mach-Zehnder interferometer modulators, etc. In addition, Ge CMOS circuits can also be realized on this common platform using a "photonic-first and electronic-last" processing approach. In this work, as prototype demonstration, both Ge p- and n-channel fin field-effect transistors (FinFETs) were realized on GeOI simultaneously with decent static electrical characteristics. Subthreshold swings of 150 and 99 mV/decade at vertical bar V-D vertical bar = 0.1 V and drive currents of 91 and 10.3 mu A/mu m at vertical bar V-G-V-TH vertical bar = 1 V and vertical bar V-D vertical bar = 0.75 V were achieved for p- and n-FinFETs, respectively. This works illustrates the potential of integrating GeSn (as photo detection material) on GeOI platform for Ge-based optoelectronics integrated circuits (OEICs) targeting communication applications at 2 mu m band. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Integration of Tensile-Strained Ge P-I-n Photodetector on Advanced CMOS Platform

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-performance Ge P-I-n Photodetector on Si Substrate

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Low Thermal Budget Monolithic Integration of Evanescent-Coupled Ge-on-SOI Photodetector on Si CMOS Platform

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Tensile-Strained Germanium CMOS Integration on Silicon

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

(Invited) Optoelectronic Monolithic Integration of Waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI Wafer

Monolithically Fabricated Germanium-On-Soi Photodetector and Si Cmos Circuit for Integrated Photonic Applications

Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding

Monolithic integration and optimization of waveguide silicon modulators and germanium photodetectors

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band.

Low Dark Current Ge/Si Photodetector Grown by Selective Epitaxial Growth

Fabrication and Characteristics of Si-based Ge Waveguide Photodetectors

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Monolithic Integration of Strained UV–Visible Dual Color Photodetectors on 4 In. Multilayer MoS2-on-Freestanding GaN Wafer by Direct Van Der Waals Growth

Selective Epitaxial Germanium on Silicon-on-insulator High Speed Photodetectors Using Low-Temperature Ultrathin Si0.8Ge0.2 Buffer