16 × 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga 2 O 3 Film

Yu-Song Zhi,Zeng Liu,Shao-Hui Zhang,Shan Li,Zu-Yong Yan,Pei-Gang Li,Wei-Hua Tang

DOI: https://doi.org/10.1109/ted.2021.3081522

IF: 3.1

2021-07-01

IEEE Transactions on Electron Devices

Abstract:In this article, a $16\times4$ linear array of $\beta $ -Ga2O3-based metal-semiconductor-metal structured photodetector is described for solar-blind sensing operation at a wavelength of 254 nm. The $\beta-\mathrm{Ga}_{2} \mathrm{O}_{3}$ film is grown by using metal-organic chemical vapor deposition (MOCVD) equipment, and the photodetectors are finished in constructing with standard photolithography and ion beam sputtering procedures. The results show that the dark current (${\mathrm {I}}_{{dark }}$ ), photo-to-dark current ratio (PDCR), photo responsivity (R), specific detectivity $\left(D^{*}\right)$ , exterl quantum efficiency (EQE), and linear dynamic region (LDR) are 1.94 pA, $2.95 \times 10^{7}$ , 139.56 A/W, $2.55 \times 10^{15}$ Jones, $6.8 \times 10^{4 \%}$ , and 149.4 dB, at 10 V bias and $2000 \mu \mathrm{W} / \mathrm{cm}^{2}$ light intensity illumination. In addition, the standard deviation of $R$ for this photodetector array is 10%. Overall, such a $16 \times 4$ linear array of $\beta-\mathrm{Ga}_{2} \mathrm{O}_{3}$ -based photodetector array makes a progress in the field of Ga2O3 photodetectors.

engineering, electrical & electronic,physics, applied