16×16 Solar-Blind UV Detector Based on β-Ga 2 O 3 Sensors

Gao-Hui Shen,Zeng Liu,Mao-Lin Zhang,Yu-Feng Guo,Wei-Hua Tang
DOI: https://doi.org/10.1109/led.2023.3272909
IF: 4.8157
2023-01-01
IEEE Electron Device Letters
Abstract:In this work, a 16×16 Ga2O3 photodetector array is introduced. The Ga2O3 thin film was deposited on c-sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The high rejection ratio of 8×103 indicate good wavelength selectivity. The photodetector displayed responsivity of 60.7 A W-1, specific detectivity of 2.2×1014 cm √Hz W-1 (Jones), external quantum efficiency of 3×104%, linear dynamic region of 120.34 dB, respectively. Excited by a laser, the photodetector had a rise time of 6 ms and a decay time of 48 ms, suggesting a fast response ability for tracing light signal. For the 256 pixels in this array, the dark current locates from 2 pA to 4 pA, and shown no disparity. More than 75% of the units have a maximum standard deviation of less than 10%. This work could show a guidance for advancing the solar-blind UV sensing devices and further applications.
engineering, electrical & electronic
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