Realization of 11.5% Efficiency Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells by Manipulating the Phase Structure of Precursor Films
Bin Xu,Xiatong Qin,Xiaoshuang Lu,Yulin Liu,Ye Chen,Hui Peng,Pingxiong Yang,Junhao Chu,Lin Sun
DOI: https://doi.org/10.1002/solr.202100216
IF: 9.1726
2021-07-14
Solar RRL
Abstract:<p>Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> has been widely concerned as a promising thin-film solar cell material. In recent years, the development of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> solar cells has encountered a bottleneck, and the higher open-circuit voltage deficit mainly caused by the secondary phase, CZTSSe/CdS interface recombination, deep-level defects and band-tailing effects, has been an outstanding issue. Herein, the influence of the composition and phase distribution of the precursor thin film on the defect and performance of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> solar cells was studied. By modifying the distribution of composition and phase for precursor films, the Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> absorber layer without secondary phase and with fewer detrimental defects can obtained from the pure-phase precursor film. Thanks to the reduction of the band-tailing effects, the increase of the depletion width for heterojunction and the decrease of CZTSSe/CdS interface recombination, the photovoltaic performance of CZTSSe thin film solar cells has been significantly improved. Finally, based on the excellent kesterite absorber layer, we prepared a Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> solar cell with 11.51% power conversion efficiency (the active area efficiency is 12.4%).</p><p>This article is protected by copyright. All rights reserved.</p>
energy & fuels,materials science, multidisciplinary