Ge-on-Si single-photon avalanche diode using a double mesa structure

Maurice Wanitzek,Jörg Schulze,Michael Oehme

DOI: https://doi.org/10.1364/ol.534436

IF: 3.6

2024-11-05

Optics Letters

Abstract:Maurice Wanitzek, Jörg Schulze, Michael Oehme We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using ... [Opt. Lett. 49, 6345-6348 (2024)]

optics

What problem does this paper attempt to address?

Monolithic Ge/Si avalanche photodiodes

yimin kang,michael t morse,mario j paniccia,moshe zadka,yuval saad,gadi sarid,alexandre pauchard,wissem sfar zaoui,huiwen chen,daoxin dai,john e bowers,handin liu,dion mcintosh,xiaoguang zheng,j c campbell

DOI: https://doi.org/10.1109/GROUP4.2009.5338300

2009-01-01

Abstract:We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Yanning Chen,Fang Liu,Yali Shao,Yingzong Liang,Sichao Du,Wen-Yan Yin

DOI: https://doi.org/10.1109/access.2024.3449098

IF: 3.9

2024-01-01

IEEE Access

Abstract:The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents two vertical Ge-on-Si avalanche photodetectors fabricated in a separate absorption, charge, and multiplication configuration. Uniformity in materials, doping densities, and device dimensions is maintained, except for the multiplication width, which is used as a control parameter to manipulate avalanching fields under identical electric biasing and illumination schemes. Nonlocal carrier multiplication model is implemented during analysis of the extracted current-voltage signatures under small and large reverse biasing arrangements. For such an APD characterized by thinner multiplication region (W-m=0.1 mu m), reduced linear and Geiger-mode multiplication regimes are perceived to be at play, outperforming the device having thicker multiplication region in almost all related figures of merit, e.g., responsivity (22.58 /W), photo-to-dark current ratio (similar to 10(5)), normalized photo-to-dark current ratio (2.5x 10(9) W-1) , specific detectivity (7.45x 10(12)Jones) , and noise equivalent power (similar to 2.42x 10(-15) W/root Hz) . The enhanced performance characteristics are due to excessively strong avalanching fields, reduced thermal charge density, and negligible dead space compared to its counterpart characterized by thicker multiplication width.
Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Hao Zhou,Shengqiang Xu,Shaoteng Wu,Yi-Chiau Huang,Peng Zhao,Jinchao Tong,Bongkown Son,Xin Guo,Daohua Zhang,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.409944

IF: 3.8

2020-01-01

Optics Express

Abstract:A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×1010 cm·Hz1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.
Simulation of photonic crystal enhanced Ge-on-Si single photon avalanche diodes

Charlie K. Smith,Charlie McCarthy,Ross W. Millar

DOI: https://doi.org/10.1364/oe.531687

IF: 3.8

2024-10-12

Optics Express

Abstract:Charlie K. Smith, Charlie McCarthy, Ross W. Millar Simulations of single photon avalanche diodes (SPADs) based on the Ge-on-Si material platform are presented, highlighting the potential ... [Opt. Express 32, 38805-38818 (2024)]

optics
High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Yuluan Xiang,Hengzhen Cao,Chaoyue Liu,Daoxin Dai

DOI: https://doi.org/10.1364/OE.450618

IF: 3.8

2022-01-01

Optics Express

Abstract:A high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed with a Ge/Si ridge waveguide defined by two shallow trenches in the active region and fabricated with simplified processes. The device shows a high primary responsivity of 0.96 A/W at the unit-gain voltage of -7.5 V. It has a large 3-dB bandwidth of >27 GHz and a low dark current of 1.8 mu A at a reverse bias voltage of -13 V. When the present Ge/Si APD is used for receiving 25 Gbps data, the eye-diagram is open even for an optical power as low as -18 dBm. Furthermore, 50 Gbps data receiving is also demonstrated with an input optical power of -15 dBm, showing the great potential of the present Ge/Si APD for the application in future high-speed data transmission systems. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Hao Zhou,Shengqiang Xu,Yiding Lin,Yi-Chiau Huang,Bongkwon Son,Qimiao Chen,Xin Guo,Kwang Hong Lee,Simon Chun-Kiat Goh,Xiao Gong,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.389378

IF: 3.8

2020-01-01

Optics Express

Abstract:We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm2 at −1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at −5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm.
Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

Daoxin Dai,Molly Piels,John E. Bowers

DOI: https://doi.org/10.1109/jstqe.2014.2322443

IF: 4.9

2014-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:The Ge/Si system is useful to realize avalanche photodetectors (APDs) operating at 1310 similar to 1550 nm because of the intrinsic advantages of complementary metal-oxide-semiconductor (CMOS) compatibility, high light-absorption of Ge, low ionization rate ratio of silicon, and high thermal conductivities of Si and Ge. With the Ge/Si system, it is convenient to realize photodetectors with decoupled structures including resonant Ge/Si APDs as well as uni-traveling carrier (UTC) photodiodes. The resonant Ge/Si APD with a separated absorption-charge-multiplication (SACM) structure, which decouples the light absorption and avalanche process, has high speed, high gain, and high gain-bandwidth product. The UTC photodiode, which decouples the light absorption and the carrier collection, is useful for high-power applications. This paper first reviews the structure and model of decoupled Ge/Si (A) PDs, particularly, the equivalent circuit models for explaining the peak enhancement of the frequency response in resonant SACM APDs. This model is also applied to UTC Ge/Si PDs developed recently for the high-power applications.
High performance planar germanium-on-silicon single-photon avalanche diode detectors

Peter Vines,Kateryna Kuzmenko,Jarosław Kirdoda,Derek C. S. Dumas,Muhammad M. Mirza,Ross W. Millar,Douglas J. Paul,Gerald S. Buller

DOI: https://doi.org/10.1038/s41467-019-08830-w

IF: 16.6

2019-03-06

Nature Communications

Abstract:Single-photon detection has emerged as a method of choice for ultra-sensitive measurements of picosecond optical transients. In the short-wave infrared, semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. This planar geometry has enabled a significant step-change in performance, demonstrating single-photon detection efficiency of 38% at 125 K at a wavelength of 1310 nm, and a fifty-fold improvement in noise equivalent power compared with optimised mesa geometry SPADs. In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing effects. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications.

multidisciplinary sciences
Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Yiding Lin,Danhao Ma,Kwang Hong Lee,Jin Zhou,Xin Guo,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2018.8478713

2018-01-01

Abstract:A germanium (Ge) MSM photodetector is demonstrated with significantly-enhanced photo-response at the L-band and beyond, using SiNx stressor at the waveguide sidewalls created by a self-aligned dry etching method. This provides a CMOS-compatible solution for Ge detectors for broadband high-speed integrated photonic applications.
Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Hao Zhou,Qimiao Chen,Shaoteng Wu,Lin Zhang,Xin Guo,Bongkwon Son,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.449326

IF: 3.8

2022-01-01

Optics Express

Abstract:Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 µA was achieved at -1 V. The grating structure enhances the optical absorption by guiding the lateral propagation of normal incident light, contributing to a 3× improved responsivity at 1,550 nm. Compared with the grating structure, the hole-array structure not only guides the lateral modes but also benefits the vertical resonance modes. A 4.5× higher responsivity of 0.188 A/W at 1,550 nm was achieved on the 260 nm Ge absorptive layer. In addition, both the grating and the hole-array structure attribute to a 2× and a 1.6× enhanced 3dB bandwidth at -5 V due to significantly reduced capacitance. The planar configuration of p-i-n photodiodes is favorable for large-scale monolithic integration. The incorporated surface structures offer promising approaches to reinforce the responsivity and bandwidth simultaneously, paving the way for the development of high-performance Ge photodetectors on silicon substrate.
Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection

Maurice Wanitzek,Michael Hack,Daniel Schwarz,Jörg Schulze,Michael Oehme

DOI: https://doi.org/10.1016/j.mssp.2024.108303

IF: 4.1

2024-03-08

Materials Science in Semiconductor Processing

Abstract:Avalanche photodiodes utilizing GeSn as an absorbing material can be used for low-light detection of telecommunication wavelengths, such as 1550 nm. We present the performance of GeSn-on-Si avalanche photodiodes at low-temperatures down to 110 K. It was found, that at temperatures above 190 K the dark current is dominated by generation-recombination due to trap states at the SiO 2 -semiconductor interface with an activation energy of ∼0.2 eV. At lower temperatures and high reverse voltages the leakage mechanism shifts to trap-assisted-tunneling. Responsivity measurements show the shift of the absorption edge toward shorter wavelengths. For 1550 nm and at 140 K a responsivity of 0.097 A/W is achieved, which is five times higher than a Ge reference-APD. When biased in the Geiger-mode, measurements of the dark count rates were performed, marking the first step towards GeSn-on-Si single-photon detectors for 1550 nm radiation.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
In 0.52 Al 0.48 As Based Single Photon Avalanche Diodes With Stepped E-Field in Multiplication Layers and High Efficiency Beyond 60%

Yi-Shan Lee,Yan-Min Liao,Ping-Li Wu,Chi-En Chen,Yu-Jie Teng,Yu-Ying Hung,Jin-Wei Shi

DOI: https://doi.org/10.1109/jstqe.2021.3114130

IF: 4.9

2022-03-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We carry out an In0.53Ga0.47AsIn0.52Al0.48As single photon avalanche diode which exhibits a single photon detection efficiency exceeding 60 at 1310 nm and neat temporal characteristic of 65 ps. A novel concept of dual multiplication layer is incorporated to avoid the tradeoff between dark count rate, afterpulsing and timing jitter, paving the possibility to improve the overall performance of a single photon detector. Based on this elevated device structure, we further optimize the detection efficiency and timing jitter by employing a delicate mesa structure to better confine the electric field distribution within the central multiplication region. For our detector operated under gated mode, a shorten gate width together with an increase of excess bias percentage leads to a significant improvement in the detection performance. We eventually achieve a single photon detection efficiency of 61.4 without the involvement of afterpulsing at the gating frequency of 10 kHz for 200 K.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Silicon single-photon avalanche diodes with nano-structured light trapping

Kai Zang,Xiao Jiang,Yijie Huo,Xun Ding,Matthew Morea,Xiaochi Chen,Ching-Ying Lu,Jian Ma,Ming Zhou,Zhenyang Xia,Zongfu Yu,Theodore I. Kamins,Qiang Zhang,James S. Harris

DOI: https://doi.org/10.1038/s41467-017-00733-y

IF: 16.6

2017-01-01

Nature Communications

Abstract:Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.
Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise

Fiona Fleming,Xin Yi,Muhammad M. A. Mirza,Xiao Jin,Jaroslaw Kirdoda,Derek C. S. Dumas,Lisa Saalbach,Mrudul Modak,Dave A. S. Muir,Charlie Smith,Conor Coughlan,Qingyu Tian,Ross W. Millar,John P. R. David,Douglas J. Paul,Gerald S. Buller

DOI: https://doi.org/10.1364/oe.521417

IF: 3.8

2024-05-14

Optics Express

Abstract:Fiona Fleming, Xin Yi, Muhammad M. A. Mirza, Xiao Jin, Jaroslaw Kirdoda, Derek C. S. Dumas, Lisa Saalbach, Mrudul Modak, Dave A. S. Muir, Charlie Smith, Conor Coughlan, Qingyu Tian, Ross W. Millar, John P. R. David, Douglas J. Paul, Gerald S. Buller Germanium-on-Silicon (Ge-on-Si) avalanche photodiodes (APDs) are of considerable interest as low intensity light detectors for emerging ... [Opt. Express 32, 19449-19457 (2024)]

optics
Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

Md Nabil Shehtab Dhrubo,John W. Rollinson,Robert F. Karlicek,Mona M. Hella

DOI: https://doi.org/10.1109/ted.2024.3442772

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:A top-illuminated Ge-on-Si avalanche photodiode is designed and fabricated in GlobalFoundries' 45-nm SOI platform (Si Photonic). The device utilizes an annular-shaped germanium layer as the absorption region, enclosed by cathode contacts to ensure avalanche multiplication of photocarriers and flow of photocurrent from all directions to the central anode. The proposed device structure modification results in an increased gain within a small silicon area. The device utilizes a germanium width of m to reduce the carrier transit time and achieve high optoelectronic bandwidth. Testing is performed using 940- and 1550-nm wavelength continuous wave lasers. At a reverse bias of 4 V, the device shows a peak gain of 3.5 and 8.6 at 940- and 1550-nm wavelength, respectively. At the same bias, a -3-dB optoelectronic bandwidth of around 13.4 GHz is observed for 1550-nm wavelength. This results in a gain-bandwidth product (GBP) of ~115 GHz at 1550-nm wavelength for a low reverse bias of 4 V.

engineering, electrical & electronic,physics, applied
A group-IV double heterostructure light emitting diode for room temperature gain in Silicon

Andreas Salomon,Johannes Aberl,Lada Vukušić,Enrique Prado-Navarrete,Jacqueline Marböck,Diego-Haya Enriquez,Jeffrey Schuster,Kari Martinez,Heiko Groiss,Thomas Fromherz,Moritz Brehm

2024-09-17

Abstract:The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect semiconductor, is a poor light emitter. Here, we identify conceptionally simple Si/Si$_{1-x}$Ge$_x$/Si double heterostructures (DHS) with large Ge content ($x \gtrsim 0.4$) as auspicious gain material suitable for Si-based integrated optics. In particular, using self-consistent Poisson-current transport calculations, we show that Si diodes containing a 16 nm thick Si$_{1-x}$Ge$_x$ layer of high crystalline quality, centered at the p-n junction, results in efficient carrier accumulation in the DHS and gain if the diode is driven in forward direction. Despite the high strain, we unambiguously demonstrate that such prior unattainable defect-free DHS can be fabricated using ultra-low temperature epitaxy at pristine growth pressures. Telecom light emission is persistent up to 360 K, and directly linked to a ~160 meV high conduction band barrier for minority electron injection. This epitaxy approach allows further increasing the Ge content in the DHS and creating dot-in-well heterostructures for which even higher gains are predicted. Thus, the surprisingly facile DHS presented here can be an essential step toward novel classes of group-IV optoelectronic devices for silicon photonics.

Mesoscale and Nanoscale Physics,Optics
4H–sic Avalanche Photodiode Linear Array Operating in Geiger Mode

Lianghui Li,Dong Zhou,Hai Lu,Wenkai Liu,Xiaofan Mo,Fangfang Ren,Dunjun Chen,Ruiqi Wang,Guanglei Li,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1109/jphot.2017.2750686

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this study, a 50-pixel linear array of 4H–SiC ultraviolet avalanche photodiodes operating in Geiger mode is reported for the first time. The 50 pixels within the linear array are all capable of detecting single photons but with a small number of them suffering from extra leakage current near avalanche breakdown. The enhanced leakage is likely correlated with structural defects existing within the epitaxial structure, which would lead to higher dark count rate (DCR) at the same single photon detection efficiency (SPDE) in Geiger mode. For a low-leakage avalanche photodiode device within the linear array, a room temperature SPDE of 15.4% at 280 nm is obtained with a corresponding DCR of 2.5 Hz/μm2.
Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

john e bowers,daoxin dai,wissem sfar zaoui,yimin kang,michael t morse

DOI: https://doi.org/10.1109/PHOTWTM.2010.5421935

2010-01-01

Abstract:A resonant Ge/Si APD with the SACM (separate-absorption-charge-multiplication) structure is presented. Due to the resonance effect in the avalanche region, the Ge/Si APD shows an ultra-high gain-band products (GBP) (860 GHz). This may make it possible to generate electrical data directly without a TIA (trans-impedance-amplifier). Consequently, the receiver based on the resonant Ge/Si APD may be cheaper, smaller and lower power than existing approaches.
Influence of metal-semiconductor junction on the performances of mixed-dimensional MoS2/Ge heterostructure avalanche photodetector

Xixi Yuan,Ningning Zhang,Tianyao Zhang,Lingyao Meng,Junming Zhang,Jifang Shao,Maliang Liu,Huiyong Hu,Liming Wang

DOI: https://doi.org/10.1364/OE.458528

2022-06-06

Abstract:The two-dimensional/three-dimensional van der Waals heterostructures provide novel optoelectronic properties for the next-generation of information devices. Herein, MoS2/Ge heterojunction avalanche photodetectors are readily obtained. The device with an Ag electrode at MoS2 side exhibits more stable rectification characteristics than that with an Au electrode. The rectification radio greater than 103 and a significant avalanche breakdown are observed in the device. The responsivity of 170 and 4 A/W and the maximum gain of 320 and 13 are obtained under 532 and 1550 nm illumination, respectively. Such photoelectric properties are attributed to the carrier multiplication at a Ge/MoS2 junction due to an avalanche breakdown. The mechanism is confirmed by the Sentaurus TCAD-simulated I-V characteristics.
Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode.

Shaoying Ke,Shaoming Lin,Danfeng Mao,Yujie Ye,Xiaoli Ji,Wei Huang,Cheng Li,Songyan Chen

DOI: https://doi.org/10.1364/AO.56.004646

IF: 1.9

2017-01-01

Applied Optics

Abstract:We investigate the effect of temperature on the single-photon properties of four germanium/silicon (Ge/Si) single-photon avalanche photodiodes (SPADs), which are fabricated by Ge-on-Si direct epitaxial growth, Ge-on-Si two-step epitaxial growth, Ge/Si direct wafer bonding, and Si/Si hydrophobic bonding, respectively. It is found that the wafer-bonded Ge/Si SPAD exhibits extremely low dark current and dark count rate (DCR) compared with the epitaxial ones at 250 and 300 K. This implies that the wafer-bonding technique is a possible candidate for the fabrication of Ge/Si SPAD, which can be operated at near room temperature. Additionally, due to the low DCR and high operation temperature, the wafer-bonded Ge/Si SPAD shows extremely high pulse repetition rate (similar to 28 MHz in theory for DCR = 10(8) Hz). That is, the wafer-bonded Ge/Si SPAD can be used in a high-speed field. Finally, the effect of voltage pulse width, number of photons per pulse, and hold-off time on the performance of the wafer-bonded Ge/Si SPAD at different temperatures is also clarified. (C) 2017 Optical Society of America

Ge-on-Si single-photon avalanche diode using a double mesa structure

Monolithic Ge/Si avalanche photodiodes

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Simulation of photonic crystal enhanced Ge-on-Si single photon avalanche diodes

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Monolithic Germanium/Silicon Photodetectors with Decoupled Structures: Resonant Apds and Utc Photodiodes

High performance planar germanium-on-silicon single-photon avalanche diode detectors

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection

In 0.52 Al 0.48 As Based Single Photon Avalanche Diodes With Stepped E-Field in Multiplication Layers and High Efficiency Beyond 60%

Silicon single-photon avalanche diodes with nano-structured light trapping

Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise

Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

A group-IV double heterostructure light emitting diode for room temperature gain in Silicon

4H–sic Avalanche Photodiode Linear Array Operating in Geiger Mode

Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product

Influence of metal-semiconductor junction on the performances of mixed-dimensional MoS2/Ge heterostructure avalanche photodetector

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode.