Abstract:In this work, a reverse conduction beta-phase gallium oxide ( $eta $ -Ga2O3 vertical FinFET with an integrated Fin diode (FD) is proposed to improve reverse conduction characteristics with little effect on the threshold voltage ( ${V}_{ ext {th}}$ ) and breakdown voltage (BV). Its electrical characteristics are studied and analyzed by Sentaurus technology computer aided design (TCAD) simulation. The integrated FD achieves metal–insulator–semiconductor (MIS)-like conduction/blocking characteristics owing to the Fin channel combined with an Ohmic contact anode. In the reverse conduction state, the FD first realizes a very low reverse turn-on voltage ( ${V}_{ ext {on}}$ ), and then forms the electron accumulation layers along the Fin sidewalls to improve reverse current capability; in the forward conduction and blocking states, the Fin channel of FD is pinched off by the MIS structures from the two sidewalls due to the work function difference between the source metal and $eta $ -Ga2O3, without obvious influence on the forward conduction and blocking characteristics. Compared with the conventional FinFETs (C-FinFETs), the reverse conduction $eta $ -Ga2O3 vertical FinFET (RC-FinFET) reduces the ${V}_{ ext {on}}$ by 71% with almost the same ${V}_{ ext {th}}$ and BV values. The proposed $eta $ -Ga2O3 RC-FinFET achieves a low ${V}_{ ext {on}}$ of 0.45 V, high ${V} _{ ext {th}}$ of 1.6 V, BV of 2545 V, and Baliga’s figure of merit (BFOM) up to 1.41 GW/cm2. In addition, compared to a field effect transistor (FET) externally connecting a freewheeling diode, the RC-FinFET reduces the parasitic inductance and the total chip area, enhancing its application potential for high-power and low-loss power conversion systems.

Ga$_{\text{2}}$O$_{\text{3}}$ Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction

Low Reverse Conduction Loss $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Vertical FinFET With an Integrated Fin Diode

High Voltage GaN Vertical FinFET with a Compatible Integrated Fin Diode for Low Reverse Conduction Loss.

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

Vertical GaN Power Transistor with Embedded Fin-shaped Diode for High Performance Power Conversion

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-In Schottky Barrier Diode

Silicon Carbide Split-Gate MOSFET with Merged Schottky Barrier Diode and Reduced Switching Loss

<i>p</i>-GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability

A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance

Design and Fabrication of 1.2kv SBD Integrated 4hsic MOSFET for Reliable Reverse Conduction

A Split Gate Power FINFET with Improved ON-Resistance and Switching Performance

SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect

A Novel Double Trench 4H-Sic MOSFET with Integrated Schottky Barrier Diode

A GaN-on-Si Quasi-Vertical Schottky Barrier Diode with Enhanced Performance Using Fluorine Ion-Implanted Field Rings

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

A Novel GaN-based Lateral SBD with a TUG-AlGaN/GaN Heterojunction

High performance SiC trench-type MOSFET with an integrated MOS-channel diode

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate