Boron-10 conversion layer for ultra-cold neutron detection

B. Clement,A. Bes,A. Lacoste,R. Combe,V.V. Nesvizhevsky,G. Pignol,D. Rebreyend,Y. Xi
DOI: https://doi.org/10.1088/1748-0221/14/09/P09003
2019-11-25
Journal of Instrumentation
Abstract:We report on the development of a 10 B conversion layer optimized for ultra-cold neutron detection with silicon detectors. The efficiency of this layer is high and roughly uniform over a large ultra-cold neutron velocity range. The designed titanium-boron-nickel multilayer film was deposited on silicon using a microwave plasma-assisted co-sputtering method (first, for test purpose, on silicon wafers, then directly on the surface of a CCD sensor). The obtained sensor was then tested using both cold and ultra-cold neutrons.
instruments & instrumentation
What problem does this paper attempt to address?