Abstract:Microstructured semiconductor neutron detectors (MSNDs) have shown to be a viable candidate for 3He detector replacements offering low cost, minimal power consumption, and high intrinsic thermal-neutron detection efficiency. MSNDs are vertically operated p ν n-diodes with microfeatures etched into the semiconductor substrate that are subsequently backfilled with neutron conversion material. Charged particles emitted after a neutron is absorbed within an microfeature can interact in the adjacent semiconductor substrate, and those interactions can then be measured. Commercially produced MSNDs have an intrinsic thermal-neutron detection efficiency of approximately 30%. The dual-sided microstructured semiconductor neutron detector (DS-MSND) is a p ν p-type diode, which implements microstructures on the back-side of a MSND that complement the front-side microstructures and eliminate neutron free streaming paths. The intrinsic thermal-neutron detection efficiency of DS-MSNDs was previously limited to less than 55%. The major limiting factor in detection efficiency of DS-MSNDs was determined to be the 6LiF powder packing fraction within the DS-MSND trenches. The packing fraction was previously assumed to be greater than 90%; however, recent measurements show the actual packing fraction was approximately 30%. MCNP6 simulations were performed with the updated packing fraction and showed good agreement with the detection efficiencies measured with the previous generation of detectors. A new backfilling method was developed that utilizes a mixture of two 6LiF powders with different powder particle size distributions. In the new method the powder is pressed into the DS-MSND trenches with a roller instead of using the centrifugal backfill method, which could remove previously backfilled material during the back-side trench filling centrifuge process. The new backfill method has improved the attainable 6LiF packing fraction to 55%. The new 6LiF backfilling method coupled with an improved wet etching process have yielded DS-MSNDs with intrinsic thermal-neutron detection efficiencies as high as 69.2 ± 0.8%, which matched well with updated MCNP6 simulations.

A double-helix neutron detector using micron-size B-10 powder

A 10B-based neutron detector with stacked Multiwire Proportional Counters and macrostructured cathodes

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Prototype of a Large Neutron Detector Based on MWPC

The Study of Boron-Lined Honeycomb Neutron Detector with a Multi-Wire Proportional Chamber Readout

Multilayer $^{10}B$-RPC neutron imaging detector

Neutron imaging and spatial resolution evaluation of the boron-lined honeycomb neutron converter based detector

A New Neutron Detector Based on Ceramic THGEM and Boron-Coated Meshes

Hybrid Superconducting Neutron Detectors

Experimental Research on A Boron-Coated Multi-Wire Proportional Chamber Neutron Detector

A large area, high counting rate micromegas-based neutron detector for BNCT

Development of a novel neutron detection technique by using a boron layer coating a Charge Coupled Device

Superconducting transition edge bolometer for high-flux neutron detection

Improved manufacturing and performance of the dual-sided microstructured semiconductor neutron detector (DS-MSND)

The Research Of High Detection Efficiency Boron Lined Detector With A Honeycomb Neutron Converter

Construction of a two-dimensional thermal neutron detector

Low Background Thermal Neutron Detector System

Developments of a 2D position sensitive neutron detector

Boron-10 layers, Neutron Reflectometry and Thermal Neutron Gaseous Detectors

Research on a Neutron Detector With a Boron-Lined Honeycomb Neutron Converter

Development of compact high efficiency microstructured semiconductor neutron detectors