Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Silicon Nitride Bent Asymmetric Coupled Waveguides with Partial Euler Bends

Silicon nitride bent asymmetric coupled waveguides with partial Euler bends

Waveguide Bends from Nanometric Silica Wires

Analysis of silicon nitride partial Euler waveguide bends

Radiation in Bent Asymmetric Coupled Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Compact Low-Loss Adiabatic Bends in Silicon Shallow-Etched Waveguides

Ultracompact integrated polarizers using bent asymmetric coupled waveguides

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Low-loss and Low-Crosstalk Multimode Waveguide Bend on Silicon.

Sandwiched Hybrid Waveguide Platform for Integrated Photonics Application

Waveguides Used for Nano- Photonic Circuits

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Very Sharp Adiabatic Bends Based on an Inverse Design.

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Efficient Adiabatic Silicon-on-insulator Waveguide Taper

Design and Characterization of Q-enhanced Silicon Nitride Racetrack Micro-Resonators

Ultra-low-loss High-Aspect-ratio Si3N4 Waveguides.

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band