Indium Bump Bonding: Advanced Integration Techniques for Low-Temperature Detectors and Readout

Lucas, T. J.
DOI: https://doi.org/10.1007/s10909-024-03104-2
2024-04-22
Journal of Low Temperature Physics
Abstract:We have examined the influence of bump shape and bonding pressure on low-temperature electrical properties of indium bump connections including superconducting transition temperature, normal state resistance, and superconducting critical current. We describe our test structures, bonding process, and methods of characterization. At temperatures below 1 K, we observe critical currents greater than 70 mA for indium bump connections with a nominal bump size of 17 μm × 17 μm.
physics, condensed matter, applied
What problem does this paper attempt to address?
This paper aims to study the electrical characteristics of indium bump connections at low temperatures, especially the influencing factors of the superconducting transition temperature, normal - state resistance, and superconducting critical current. Specifically, the authors explored the effects of bump shape and bonding pressure on these characteristics. ### Research Background Indium bump bonding is an ideal hybrid technology for assembling low - temperature detectors. As a superconducting material that remains ductile at low temperatures, indium can be manufactured into bumps on a large scale. Successful instruments based on bolometers, such as SCUBA - 2 and HAWC +, have demonstrated the ability to use indium bump bonding for large - scale integrated transition - edge sensor arrays and SQUID readout arrays. In this work, the authors specifically focused on the effects of compression and bump geometry on the normal - state resistance and critical current ($I_C$) of bump bonds. ### Main Content 1. **Test Structure**: - A three - layer bump process was fabricated, including a niobium wiring layer, a titanium nitride bottom bump metal, and an indium bump metal. - The test structure consisted of two chips of different sizes, with 17 μm × 17 μm square bumps and 17 μm × 30 μm rectangular bumps on each chip. - These chips were bonded together by 90 - degree rotation to form a cross - structure. 2. **Bonding Process**: - The chips were protected by photoresist, cut, solvent - cleaned, and optically inspected. - Bonding was carried out using a custom - made chip fixture to ensure the parallelism and alignment accuracy of the bonding area. - The force applied during the bonding process ranged from 1.5 kg to 6 kg, and the bonding was carried out at room temperature. 3. **Results**: - The alignment accuracy and flatness after bonding were measured by an infrared microscope and a white - light spectrometer. - The compression ratio and bonding pressure of the bumps were measured under different bonding forces. - Electrical tests at low temperatures showed that square bumps and rectangular bumps exhibited different trends in normal - state resistance and critical current. - At temperatures below 1 K, the observed critical current was greater than 70 mA. ### Conclusion The authors characterized the indium bump bonding process through a series of test structures and found that both square and cross - rectangular bumps can produce high - quality superconducting connections. If space allows the use of cross - rectangular bumps, they have lower normal - state resistance and higher critical current, and at the same time have higher alignment tolerance under similar bonding forces. These bump bonds are suitable for application scenarios that require single or a small number of parallel connections, such as instruments based on transition - edge sensors and metal - magnetic calorimeter circuits. ### Keywords - Hybridization - Indium Bump - Chip Bonding Through this research, the authors provided important reference data for the optimization of low - temperature detectors and readout systems.