Abstract:Author(s): Wang Chen, Wen Pan, Peng Cong, Xu Meng, Chen Long-Long, Li Xi-Feng, Zhang Jian-Hua Amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFT) are widely used in active-matrix displays because of their excellent stability, low off-current, high field-effect mobility, and good process compatibility. Among IGZO TFT device structures, back channel etching (BCE) is favorable due to low production cost, short channel length and small SD-to-gate capacitance. In this work, prepared are the BCE IGZO TFTs each with the passivation layer of silicon dioxide (SiO<sub<2< (pi)="" (v·s),="" 0.28="" 1.1×10<sup<7<="" 1.5×10<sup<10<="" 1.6="" 10<sup<–11<="" 10<sup<–14<="" 22.4="" 380="" 4.7="" a="" a,="" after="" also="" an="" and="" annealing="" applications="" are="" at="" attributed="" avoid="" avoided;="" back="" bce="" be="" behavior.="" better="" bias="" broad="" by="" channel="" channel.="" channel;="" charged="" cm<sup<2<="" comparing="" comprehensively,="" confirms="" content="" conventional="" could="" current="" decade,="" decreases="" defects="" degradation="" devices="" difference="" diffuse="" diffusion="" direct="" disappearance="" display="" donor="" dramatically="" easily="" effect="" effective="" electrical="" especially="" etchant="" etching="" exist="" explained="" field="" film="" first,="" following="" formation="" from="" greatly,="" h<sub<2<="" harder="" have="" higher="" hydrogen="" hydrogen-related="" i<sub<="" illumination="" improved="" impurities="" impurities,="" impurity="" in="" incorporation="" increases="" indicates="" industry.<="" interstitial="" into="" introduced="" is="" layer="" layer.="" less="" lower="" mechanisms:="" might="" mobility="" more="" negative="" of="" off<="" on-off="" or="" output="" p="" passivation="" performance="" performance,="" pi="" pi,="" polyimide="" positively="" precursor="" process="" promises="" quality="" radicals="" ratio="" rises="" saturation="" sd="" second,="" shallow-level="" shifting="" shows="" sih<sub<4<="" sio<sub<2<="" sites="" specifically,="" stabilities="" stability="" stacked="" states="" structure="" study="" sub<="" sub<),="" sub<-based="" sub<-pi="" sub<o<sub<2<="" substituted="" subthreshold="" sup<="" sup Acta Physica Sinica. 2023 72(8): 087302. Published 2023-04-20</sub<2<>

Impact of passivation layer on the subthreshold behavior of p-type CuO accumulation-mode thin-film transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors

Role of ALD Al 2 O 3 Surface Passivation on the Performance of p-Type Cu 2 O Thin Film Transistors

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Study of zinc tin oxide thin-film transistor

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

On-current Tunable Carbon Nanotube Thin-Film Transistor by SiO2 Passivation Layer

Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-layer Thin Film Transistors

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

On a Mott formalism for modeling oxide thin-film transistors

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga 2 O 3 MOSFET

Effective encapsulation of ZnO thin film transistors controlled by thermal energy

Lowering Interface State Density in Carbon Nanotube Thin Film Transistors Through Using Stacked Y2O3/HfO2 Gate Dielectric

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts

Fabrication of P-Type Copper Oxide Thin-Film Transisters at Different Oxygen Partial Pressure

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Effect of passivation layer on back channel etching InGaZnO thin film transistors

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors