Abstract:We discuss the role of aluminum oxide (i.e. Al2O3 when stoichiometric) for transistors and sensors based on oxide semiconductors such as InGaZnO (IGZO) and two-dimensional (2D) semiconductors, such as monolayer MoS2. Aluminum oxide is a well-known capping and dielectric layer in semiconductor technology typically deposited by atomic-layer deposition (ALD), which offers a dense and high-quality film with low gas permeability even when deposited on flexible substrates. However, when deposited at low temperature (< 200C), aluminum oxide can include a significant amount of fixed charges and defects, which lead to unusual charge trapping and doping effects in semiconductor devices. For example, such charge trapping can cause (apparent) sub-60 mV/decade subthreshold swing at room temperature in IGZO transistors, but can also lead to potential applications in neuromorphic computing. We also discuss effective doping (~1013 cm-2) of 2D semiconductors by thin ALD-grown non-stoichiometric AlOx capping layers. This is achieved with an aluminum seed layer, which enables uniform growth of the subsequently deposited ALD film. This approach leads to a negative shift in threshold voltage, record on-state current (~700 A/m) in a monolayer semiconductor, and drastic reduction in contact resistance. Finally, we investigate the passivation effects of Al2O3 capping, which limits the interaction of the underlying semiconductors with ambient air and moisture. We demonstrate improved response in MoS2 temperature sensors and long-term stability in flexible MoS2 transistors (8 months). Further, we evaluate the effects of Al2O3 passivation on IGZO transistors after aging for 80 months.

Role of ALD Al 2 O 3 Surface Passivation on the Performance of p-Type Cu 2 O Thin Film Transistors

Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Preparation and Characterization of Solution-Processed Nanocrystalline p -Type CuAlO 2 Thin-Film Transistors

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Ultrathin transparent Copper(I) oxide films grown by plasma-enhanced atomic layer deposition for Back-end-of-line p-Type transistors

Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al 2 O 3 -Passivated CeO 2 Bilayer Gate Dielectrics

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

Impact of passivation layer on the subthreshold behavior of p-type CuO accumulation-mode thin-film transistors

Atomic Layer Deposition Of Sc2o3 For Passivating Algan/Gan High Electron Mobility Transistor Devices

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al 2 O 3 Interface

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices