Abstract:Silicon carbide (Sic) materials find wide-ranging applications in advanced optical systems within the aerospace, astronomical observation, and high-intensity laser fields. The silicon-modified Sic used in this study was created by depositing an amorphous silicon film on the surface of a Sic substrate using electron beam evaporation. Such hard and brittle materials often yield smooth surfaces when subjected to plastic removal. To address the issue of the removal depth of the surface plastic domain for silicon-modified Sic, we propose a method to calculate the indentation depth based on the critical load for the transition from plastic to brittle removal. We conducted a series of nanoindentation and nanoscratching experiments. The critical depth formula was validated through mechanical parameters such as hardness, elastic modulus, and fracture toughness, and the theoretical critical depth of the modified silicon layer was calculated to be 2.71 μm. The research results indicate that the critical load for obtaining the plastic-to-brittle transition point during the nanoindentation experiment is 886 mN, at which point the depth of plastic removal is 2.95 μm, closely matching the theoretical value. The measurements taken with an atomic force microscope near the critical load reveal a scratch depth of 3.12 μm, with a relative error of less than 5% when compared to the calculated value. This study establishes a solid foundation for achieving high-quality surface processing.

What problem does this paper attempt to address?

The paper primarily explores the issue of plastic removal depth during the processing of Silicon-Modified Silicon Carbide (Si-modified SiC) materials. Specifically, the research aims to determine how to avoid the formation of cracks and microcracks when processing this hard and brittle material to ensure high-quality surface finish. To achieve this goal, the authors first describe the structural composition of Si-modified SiC materials, including an RB-SiC substrate and a layer of amorphous silicon film deposited on its surface through electron beam evaporation technology. This material combines the advantages of the SiC substrate and amorphous silicon, featuring high specific stiffness, high thermal conductivity, and good optical processing performance. Next, the paper proposes a mathematical model for calculating the transition point from plastic removal to brittle removal (i.e., the critical depth) and validates the model's effectiveness through a series of nanoindentation experiments. In the experiments, a Berkovich diamond tip was used for nanoindentation tests, measuring parameters such as hardness, elastic modulus, and indentation depth under different loads (50 mN to 500 mN), and analyzing the trends of these parameters with varying loads. The experimental results show that as the load increases, the hardness of the material gradually decreases, reflecting the size effect of Si-modified SiC materials. Based on the above experimental data, the researchers calculated the theoretical critical depth under the critical load to be 2.71 μm and further validated this conclusion through nano-scratch experiments. At a critical load of 886 mN, the plastic removal depth was 2.95 μm, which is close to the theoretical value; while under near-critical load conditions, the scratch depth measured using atomic force microscopy was 3.12 μm, with a relative error of less than 5%. In summary, this study provides important theoretical foundations and technical support for achieving high-quality surface processing of Si-modified SiC materials.

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