Enhancement of Selectivity for Chemical Mechanical Polishing by Ultra-High-Dose C and Si Ion Implantation

S. Yuan,K. Omori,T. Yamaguchi,T. Ide,S. Muranaka,M. Inoue
DOI: https://doi.org/10.1109/jeds.2024.3371455
2024-01-01
IEEE Journal of the Electron Devices Society
Abstract:The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C+ is implanted at 3×1016 ions/cm2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C+ at 1×1016 ions/cm2 or Si+ to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst’s Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation.
engineering, electrical & electronic
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