Abstract:Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding technology, a promising approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal 4H-SiC. Significant material utilization has been achieved in the hybrid laser processes, where material loss is reduced by 75% compared to that of conventional machining technologies. Without any special process control or additional treatment, an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about similar to 3.6 MPa. The modified layer has been characterized using a micro-Raman method to determine residual stress. The sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology, with an average surface roughness of over Sa 0.89 pm. An amorphous phase surrounds the SiC substrate, with two dimensions of lattice spacing, d = 0.261 nm and d = 0.265 nm, confirmed by high-resolution transmission electron microscopy (HRTEM). The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than Sa 0.22 pm. Due to the extreme cooling rates and multiple thermal cycles, dissociation of Si-C bonding, and phase separation are identified on the laser-polished surface, which is much better than that of the machining surface. We anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.(c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP)

Picosecond Laser-Assisted Chemical Mechanical Polishing (CMP): Aiming at the Si-Face of Single-Crystal 6H-Sic Wafer

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Investigation of the chemical action mechanism based on reactive force field in SiC chemical–mechanical polishing process