Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution

Qin Man,Qiang Sun,Yang Wang,Jingxiang Xu

DOI: https://doi.org/10.3390/mi15060754

IF: 3.4

2024-06-04

Micromachines

Abstract:To elucidate the atomic mechanisms of the chemical mechanical polishing (CMP) of silicon carbide (SiC), molecular dynamics simulations based on a reactive force field were used to study the sliding process of silica (SiO2) abrasive particles on SiC substrates in an aqueous H2O2 solution. During the CMP process, the formation of Si-O-Si interfacial bridge bonds and the insertion of O atoms at the surface can lead to the breakage of Si-C bonds and even the complete removal of SiC atoms. Furthermore, the removal of C atoms is more difficult than the removal of Si atoms. It is found that the removal of Si atoms largely influences the removal of C atoms. The removal of Si atoms can destroy the lattice structure of the substrate surface, leading the neighboring C atoms to be bumped or even completely removed. Our research shows that the material removal during SiC CMP is a comprehensive result of different atomic-level removal mechanisms, where the formation of Si-O-Si interfacial bridge bonds is widespread throughout the SiC polishing process. The Si-O-Si interfacial bridge bonds are the main removal mechanisms for SiC atoms. This study provides a new idea for improving the SiC removal process and studying the mechanism during CMP.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

This paper explores the atomic-level removal mechanism of silicon carbide (SiC) during chemical mechanical polishing (CMP) in hydrogen peroxide solutions. Through molecular dynamics simulations (based on reactive force fields), the sliding process of silica (SiO2) abrasives on the SiC substrate was studied. It was found that the formation of Si-O-Si interfacial bridging bonds and the insertion of oxygen atoms lead to the breaking of Si-C bonds, and even the complete removal of SiC atoms. Among them, the removal of C atoms is more difficult than that of Si atoms, and the removal of Si atoms has a significant impact on the removal of C atoms. The removal of Si atoms disrupts the lattice structure of the substrate surface, causing adjacent C atoms to be squeezed out or completely removed. The study indicates that the removal of material during the SiC CMP process is the result of a combination of various atomic-level mechanisms, among which the Si-O-Si interfacial bridging bond is the primary removal mechanism. This research provides new insights for optimizing the SiC CMP process and understanding the CMP mechanism.

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