Abstract:Single-crystal SiC has been widely applied for electronic devices. Photocatalysis assisted chemical mechanical polishing (PCMP) is an efficient global flattening technology for finishing SiC, but the atomic level removal mechanism is still under discussion. In this paper, the atomic behavior of removal with hydroxyl free radical (∙OH) aqueous solution was investigated using the ReaxFF molecular dynamics (MD) simulation. The theoretical analysis shows that ∙OH oxidation of SiC can occur spontaneously, and the mechanical behavior would be able to increase the potential energy and reduce the reaction barrier the reactants. The simulation results show that with only chemical oxidation occurs, the SiC surface adsorbed O, H or -OH to produce Si-O*H2, Si-OH2, Si-OH, Si-H2O, Si-H*O*-H2O, Si-H2O*, Si-O*H* and Si-H, etc., no Si atoms were observed to detach from the SiC substrate. Nevertheless, if the mechanical action was applied, some Si and C atoms break off the substrate by forming SiO, SiO2, CO, CO2 or chain, and the other Si or C atoms were detached by the adsorption on the abrasive. In addition, no atoms break away from the substrate in H2O solution. The force Fx in H2O solution is less than that in ∙OH aqueous solution because of the lubrication of H2O solution. Furthermore, it is found that the mechanical action applied, the more -H and -O adsorbed on the SiC surface result in the more Si and C atoms are removed. The experimental results show that SiC wafer could be oxidized by ∙OH under the mechanical action of diamond abrasive particles. This study reveals that the removal of Si and C atoms from the substrate is the result of the combined action of chemical oxidation and mechanical sliding, which is helpful to explain the dynamic process of the oxidation and removal of Si and C atoms on the atomic level in the SiC PCMP. Furthermore, it provides a valuable method reveal the material removal mechanism.

Effects of oxidizer concentration and abrasive type on interfacial bonding and material removal in 4H-SiC polishing processes

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Investigation of the chemical action mechanism based on reactive force field in SiC chemical–mechanical polishing process

Influences of Nonaqueous Slurry Components on Polishing 4H-Sic Substrate with a Fixed Abrasive Pad

Atomistic Mechanisms of Si Chemical Mechanical Polishing in Aqueous H2O2: ReaxFF Reactive Molecular Dynamics Simulations

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution

Study Using ReaxFF-MD on the CMP Process of Fused Glass in Pure H2O/aqueous H2O2

Comparative Analysis of Oxidation Methods of Reaction-Sintered Silicon Carbide for Optimization of Oxidation-Assisted Polishing

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

The Removal Mechanism of Monocrystalline Si in the Process of Double Diamond Abrasive Polishing by Molecular Dynamics Simulation

Simulation of Chemical Reactions with Methanol and Oxalic Acid on 4H-Sic Surfaces Before and after Nanoabrasion

Effects of three-body diamond abrasive polishing on silicon carbide surface based on molecular dynamics simulations

Oxidation Behavior and Mechanism of 4H-Sic Surface by Holes in Electrochemical and Photoelectrochemical Systems

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Chemical effect on the material removal rate in the CMP of silicon wafers

Study on OH radical oxidation of 4H-SiC in plasma based on ReaxFF molecular dynamics simulation