Effect of TaN buffer layer on the sensitivity of ASIC-integrated AMR sensors

Jinpeng Tian,Zhixing Zhang,Wenyu Hou,Zhe Wang,Guangshuai Yang,Shunpu Li,Qiuming Song,Xueying Zhang,Yulong Chen,Zhijian Lv,Wenwei Zhang,Yuan Jia

DOI: https://doi.org/10.1016/j.jmmm.2023.171126

IF: 3.097

2023-08-11

Journal of Magnetism and Magnetic Materials

Abstract:This study investigates the impact of a TaN buffer layer on the performance of ASIC-integrated Anisotropic Magnetoresistive (AMR) position sensors. Our findings demonstrate that the inclusion of a TaN buffer layer significantly enhances the sensitivity and stability of the sensors, with a measured sensitivity of 0.678 ± 0.03 Gauss/mV. In contrast, devices without the buffer layer exhibit a notable decline in sensitivity, decreasing to 0.165 ± 0.02 Gauss/mV after 450°C annealing. In addition, AMR sensors fabricated on non-ASIC substrates showed no such deterioration. Magneto-optical Kerr effect (MOKE) measurements reveal that the change in sensitivity is primarily attributed to variations in the anisotropy field. We propose that the increased anisotropy field is a result of magnetostatic energy induced by alterations in the PECVD-deposited SiO2 surface granular structure, supported by surface morphology characterization and X-ray diffraction experiments. These findings highlight the critical role of the TaN buffer layer in optimizing the performance and stability of ASIC-integrated AMR sensors.

materials science, multidisciplinary,physics, condensed matter