Combining annealing temperature and interface engineering for improving anisotropic magnetoresistance in Ta/NiFe/Ta films

Rita F. Constantino,Guilherme Brites,Pedro D. R. Araujo,R. Macedo,S. Cardoso
DOI: https://doi.org/10.1063/9.0000692
IF: 1.697
2024-02-01
AIP Advances
Abstract:Anisotropic magnetoresistance (AMR) sensors are pivotal in various applications due to their low power consumption, scalability, and cost-effectiveness due to the simple sensor structure, comprising one NiFe film, usually encased in a buffer and cap layer. In this work, we explore the effects of inserting MgO and Pt dusting layers between the NiFe sensing layer and adjacent capping and buffer layers, on the electric, magnetic and structural properties of AMR sensors. We describe results on sensors based on Ta/NiFe/Ta, with an as-processed AMR value of 2.0 %. The insertion of Pt thin films had a positive impact, with AMR values increasing to 2.2 %, contrary to the observed with MgO dusting films. Magnetic annealing up to 370 °C caused an increase of the resistivity and reduction in AMR (with Pt dusting layers), on the contrary, MgO dusting layers improved the sensor performance upon annealing, with AMR increasing to 2.5 % (5 h at 370 °C). In light of the findings, the incorporation of Pt and MgO dusting layers enables tailoring the grain size and resistance of Ta/NiFe/Ta films, while combined with proper annealing, which is relevant for applications where Ta and NiFe are available for AMR sensor fabrication.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to improve the anisotropic magnetoresistance (AMR) in Ta/NiFe/Ta films by combining annealing temperature and interface engineering. Specifically, the authors studied the effects of inserting thin layers of MgO and Pt between the NiFe sensing layer and the adjacent capping and buffer layers on the electrical, magnetic, and structural properties of AMR sensors. The research aims to optimize the performance of these sensors, especially in the case of using magnetic annealing techniques in the industrial manufacturing process, to increase the AMR value, thereby enhancing the sensitivity, reliability, and cost - effectiveness of the sensors. ### Main research contents: 1. **Materials and methods**: - The effects of MgO and Pt thin layers with different thicknesses on the AMR value of Ta/NiFe/Ta films were studied. - The structural, magnetic, and electrical properties of the films were analyzed by means of X - ray diffraction (XRD), vibrating sample magnetometer (VSM), and electrical transport measurements. - Magnetic annealing treatments at different temperatures and times were carried out to evaluate the influence of annealing on the film properties. 2. **Experimental results**: - The insertion of a Pt thin layer has a positive effect on the AMR value, which can reach up to 2.2%. - The insertion of a MgO thin layer reduces the AMR value in the unannealed state, but after annealing at 370 °C, the AMR value increases significantly to 2.5%. - Magnetic annealing has a significant effect on the grain size and resistivity of the films, and different annealing conditions lead to different performance changes. 3. **Conclusions**: - The Pt thin layer can significantly increase the AMR value without magnetic annealing, which is suitable for occasions where rapid performance improvement is required. - The MgO thin layer can significantly increase the AMR value after appropriate magnetic annealing treatment, and is especially suitable for processes in industrial production that require high - temperature and long - time annealing. - By optimizing the annealing conditions and selecting appropriate thin - layer materials, the AMR value of Ta/NiFe/Ta films can be effectively increased, thereby improving the overall performance of the sensors. ### Formula presentation: - **Definition of AMR value**: \[ \text{AMR}(\%)=\frac{R_{\text{max}}-R_{\text{min}}}{R_{\text{min}}}\times100 \] where \( R_{\text{max}} \) and \( R_{\text{min}} \) are the maximum and minimum resistance values respectively. - **Calculation of grain size by Scherrer equation**: \[ D = \frac{K\lambda}{\beta\cos\theta} \] where \( D \) is the grain size, \( K \) is the shape factor (usually taken as 0.943), \( \lambda \) is the X - ray wavelength, \( \beta \) is the full width at half - maximum (FWHM) of the diffraction peak, and \( \theta \) is the Bragg angle. Through these studies, the authors provide new ideas and methods for improving the performance of AMR sensors, especially in terms of material selection and process optimization.