Effect of metal insertion on the magnetic properties and anomalous Hall effect in MgO/CoFeB/Ta/MgO films

xiulan xu,Wangyang Hu,Yunlong Jia,Yiya Huang,Xin Shan,Guanlun Zhu,Hongyu Ren,Qiang He,Qixun Guo,Guang-Hua Yu
DOI: https://doi.org/10.1088/1361-6463/ad2d25
2024-02-27
Journal of Physics D Applied Physics
Abstract:CoFeB-based nano-magnetic multilayers can be applied in magnetic sensors, magnetic random access memory and other logic devices, which have attracted wide attention. The magnetic properties and interface structure of the magnetic multilayers still need further research for future applications. The effects of Pt insertion on the perpendicular magnetic anisotropy and the anomalous Hall effect of MgO/CoFeB/Pt/Ta/MgO multilayers were studied. It is found that the sample with 0.2 nm Pt insertion at the CoFeB/Ta interface and annealed at 250°C can transform the films from in-plane magnetic anisotropy to perpendicular magnetic anisotropy. The effective magnetic anisotropy Keff can reach 1.82×106 erg/cm3. The Pt insertion and annealing heat treatment can promote the migration of oxygen from MgO at the top layer to CoFeB/Ta interface and combine with Fe to generate iron oxide, and improve the orbital hybridization of Fe 3d and O 2p, thus successfully inducing the perpendicular magnetic anisotropy of the film samples. In addition, Pt insertion and annealing treatment can improve the side-jump mechanism and the skew scattering mechanism which contribute to the anomalous Hall effect. This work provides guidance for the application of perpendicular magnetic anisotropy materials in magnetic sensor and memory devices.
physics, applied
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