Abstract:This study emphasizes deterministic current‐induced spin‐orbit torque magnetization switching in CoFeB‐based systems with perpendicular magnetic anisotropy, achieving an impressive switching ratio nearing 100% without the need for a collinear in‐plane field. The integration of NiO as an antiferromagnetic insulator is vital for generating the out‐of‐plane spin polarization component σz, opening up exciting prospects for advancements in spintronics and innovative technologies. In this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.

Effect of inserting a non-metal C layer on the spin-orbit torque induced magnetization switching in Pt/Co/Ta structures with perpendicular magnetic anisotropy

Current induced magnetization switching in PtCoCr structures with enhanced perpendicular magnetic anisotropy and spin-orbit torques

Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures

Lower Switching-Current Density in Ta/(Pt/X)n/Pt/Co/Ta (X = Ta, Mn, Cu, V, Zr, Bi; N=3, 4) Multilayers Based on a Domain-Wall-depinning Model

Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn1+ x Co2− x Al Heusler alloys

Current Induced Magnetization Switching in Pt/Co/Cr Structures with Enhanced Perpendicular Magnetic Anisotropy and Spin Hall Effect

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Lower switching-current density in ( = , ; n = 3, 4) multilayers based on a domain-wall-depinning model

Perpendicular magnetic anisotropy properties of Co2FeSi/Pt multilayers deposited on amorphous dielectric Ta2O5

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Control of Perpendicular Magnetic Anisotropy and Spin Pumping Damping in MgO/CoFeB/ Ta/Pt Structures

Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

Enhanced spin-orbit torques and perpendicular magnetic anisotropy in CoFeB/MgO structures with Ta/W bilayer

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

In-Plane Current-Driven Spin-Orbit Torque Switching in Perpendicularly Magnetized Films with Enhanced Thermal Tolerance

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co2FeSi/MgO heterostructures

Insertion layer effects of ultrathin MgAl2O4 oxide on perpendicular magnetic anisotropy properties of Pt/Co2MnSi/MgAl2O4/Pt structures

Lower Switching-Current Density in Ta/(Pt/X)n/Pt/Co/Ta (