Lower Switching-Current Density in Ta/(Pt/X)n/Pt/Co/Ta (X = Ta, Mn, Cu, V, Zr, Bi; N=3, 4) Multilayers Based on a Domain-Wall-depinning Model

Shuanghai Wang,Kun He,Yongkang Xu,Zhuoyi Li,Jin Wang,Caitao Li,Xingze Dai,Jun Du,Yong-Lei Wang,Ronghua Liu,Xianyang Lu,Yongbing Xu,Liang He
DOI: https://doi.org/10.1103/physrevapplied.22.l021002
IF: 4.6
2024-01-01
Physical Review Applied
Abstract:In recent years, spin-orbit torque (SOT) generated by heavy metal (HM) has garnered increasing attention. However, SOT-magnetic random-access memory based on HM suffers from a low spin Hall angle and high current density. Here, we demonstrate that the critical switching-current density (Ic) in a multilayer structure of Ta/(Pt/Ta)4/Pt/Co/Ta has been reduced by 79% compared with that of Ta/Pt/Co/Ta, achieving a value of 5.88 x 106 A/cm2. This value is considerably low among all reported values in the Pt/Co system literature. The reduction of Ic is accompanied by enhanced dampinglike torque efficiency (beta D) and reduced coercive force (Hc). A perfect linear correlation has been observed between Ic and Hc/beta D, which supports the domain-wall depinning model of the SOT-induced magnetization reversal in this system. Crucially, this linearity extends to several metal dopants possessing the identical superlattice structure. This research offers insights into the future of low-power, high-density magnetic memory technology based on HM materials.
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