Abstract:This study emphasizes deterministic current‐induced spin‐orbit torque magnetization switching in CoFeB‐based systems with perpendicular magnetic anisotropy, achieving an impressive switching ratio nearing 100% without the need for a collinear in‐plane field. The integration of NiO as an antiferromagnetic insulator is vital for generating the out‐of‐plane spin polarization component σz, opening up exciting prospects for advancements in spintronics and innovative technologies. In this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Field-free spin-orbit torque switching in interlayer exchange coupled Co/Ta/CoTb

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Field-free switching in perpendicular Ta/CoFeB/MgO multilayers achieved by annealing temperature gradient

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Current-induced magnetization switching in a CoTb amorphous single layer

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB

Fast, low-current spin-orbit torque switching of magnetic tunnel junctions through atomic modifications of the free layer interfaces

Spin Orbital Torque Driven Magnetization Switching in Magnetic Tunnel Junction with Inter-Layer Exchange Coupling

Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers

Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Tuning nanosecond switching of spin-orbit torque driven magnetic tunnel junctions

Field-free spin–orbit torque driven multi-state reversal in wedged Ta/MgO/CoFeB/MgO heterostructures

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Spin–orbit Torque Switching in MgO/CoFeB/Ta/CoFeB/MgO Heterostructures with a Critical Current Density of 105 A/cm2

Field-free Switching of Perpendicular Magnetization at Room Temperature Using Out-of-plane Spins from TaIrTe4

All-electrical manipulation of magnetization in magnetic tunnel junction via spin–orbit torque

Imaging Magnetization Switching Induced by Spin-Orbit Torque in Perpendicularly Magnetized Ta/CoFeB Structure