Abstract:This study emphasizes deterministic current‐induced spin‐orbit torque magnetization switching in CoFeB‐based systems with perpendicular magnetic anisotropy, achieving an impressive switching ratio nearing 100% without the need for a collinear in‐plane field. The integration of NiO as an antiferromagnetic insulator is vital for generating the out‐of‐plane spin polarization component σz, opening up exciting prospects for advancements in spintronics and innovative technologies. In this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.

Spin Orbital Torque Driven Magnetization Switching in Magnetic Tunnel Junction with Inter-Layer Exchange Coupling

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

Simulation of Electric-Field and Spin-Transfer-Torque Induced Magnetization Switching in Perpendicular Magnetic Tunnel Junctions

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

Imaging Magnetization Switching Induced by Spin-Orbit Torque in Perpendicularly Magnetized Ta/CoFeB Structure

Field-free spin-orbit torque switching in interlayer exchange coupled Co/Ta/CoTb

Spin-Transfer-Induced Magnetization Switching In Magnetic Tunnel Junctions

Micromagnetic Study of Fieldlike Spin Torque Effect on the Magnetization Switching in Tunnel Junctions with Perpendicular Anisotropy

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

Magnetization configurations in current-induced tunnel junction switching

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB

Giant Orbital-to-Spin Conversion for Efficient Current-Induced Magnetization Switching of Ferrimagnetic Insulator

Spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Spin–orbit Torque Switching in MgO/CoFeB/Ta/CoFeB/MgO Heterostructures with a Critical Current Density of 105 A/cm2

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Experiments and SPICE Simulations of Double MgO-based Perpendicular Magnetic Tunnel Junction*

Spin Torque Effect on Topological Defects and Transitions of Magnetic Domain Phases in Ta/CoFeB/MgO

Spin Orbit Torques Induced Magnetization Reversal Through Asymmetric Domain Wall Propagation in Ta/CoFeB/MgO Structures

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Dimensional scaling effects on critical current density and magnetization switching in CoFeB-based magnetic tunnel junction