Abstract:This work reports a study of how to activate the stochasticity/memristivity in a spin‐orbit torque device composed of a heavy‐metal/ferromagnet/antiferromagnet trilayer. Via tailoring the antiferromagnetic order on the presence of exchange bias, the strength of Dzyaloshinskii–Moriya interaction in the trilayer can be manipulated to behave as either a stochastic cell for physically unclonable function or a memristive cell for neuromorphic computing. Antiferromagnet (AFM) has currently participated in the spin‐orbit torque (SOT) technology due to its great potential to be applied to the field‐free SOT switching and to promote the thermal stability of MRAM. However, the effect of varying AFM ordering on the SOT switching and the associated properties is still not comprehensively understood. This work reports how an AFM ordering modifies the strength of Dzyaloshinskii–Moriya‐interaction (DMI) in a heavy metal (Pt)/FM (Co)/AFM (IrMn) trilayer and its effects on SOT switching. Increasing the AFM ordering reflects the enhanced exchange bias through increasing IrMn thickness appears to significantly reduce the DMI strength of the trilayer. Controlling the IrMn thickness appears to serve as a unique switch to activate memristivity/stochasticity in the devices via tailoring AFM ordering on exchange bias: The strong AFM ordering via increasing IrMn thickness enables to increase the stability of multi‐levels for SOT switching, which promotes the memristivity for neuromorphic application. On the contrary, the weak AFM ordering via reducing IrMn thickness will lead to significant stochasticity for the physically unclonable functionality. This work demonstrates an intrinsic tuning over the AFM ordering will serve as a switch to turn the SOT device into a stochastic/memristive cell to bridge probabilistic and neuromorphic computing.

A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Field-Free Switching in Symmetry Breaking Multilayers: The Critical Role of Interlayer Chiral Exchange

A Spin‐Orbit Torque Ratchet at Ferromagnet/Antiferromagnet Interface via Exchange Spring

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO

A Spin–Orbit‐Torque Memristive Device

Tailoring Interlayer Chiral Exchange by Azimuthal Symmetry Engineering

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures

Tailoring neuromorphic switching by CuNx-mediated orbital currents

Comprehensive Study of the Current-Induced Spin–Orbit Torque Perpendicular Effective Field in Asymmetric Multilayers

Anatomy of Thermally Interplayed Spin-Orbit Torque Driven Antiferromagnetic Switching

Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization.

The role of interfacial Dzyaloshinskii–Moriya interaction in different heavy metal-based perpendicular magnetic systems and its application in spintronic devices

Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling