Abstract:This work reports a study of how to activate the stochasticity/memristivity in a spin‐orbit torque device composed of a heavy‐metal/ferromagnet/antiferromagnet trilayer. Via tailoring the antiferromagnetic order on the presence of exchange bias, the strength of Dzyaloshinskii–Moriya interaction in the trilayer can be manipulated to behave as either a stochastic cell for physically unclonable function or a memristive cell for neuromorphic computing. Antiferromagnet (AFM) has currently participated in the spin‐orbit torque (SOT) technology due to its great potential to be applied to the field‐free SOT switching and to promote the thermal stability of MRAM. However, the effect of varying AFM ordering on the SOT switching and the associated properties is still not comprehensively understood. This work reports how an AFM ordering modifies the strength of Dzyaloshinskii–Moriya‐interaction (DMI) in a heavy metal (Pt)/FM (Co)/AFM (IrMn) trilayer and its effects on SOT switching. Increasing the AFM ordering reflects the enhanced exchange bias through increasing IrMn thickness appears to significantly reduce the DMI strength of the trilayer. Controlling the IrMn thickness appears to serve as a unique switch to activate memristivity/stochasticity in the devices via tailoring AFM ordering on exchange bias: The strong AFM ordering via increasing IrMn thickness enables to increase the stability of multi‐levels for SOT switching, which promotes the memristivity for neuromorphic application. On the contrary, the weak AFM ordering via reducing IrMn thickness will lead to significant stochasticity for the physically unclonable functionality. This work demonstrates an intrinsic tuning over the AFM ordering will serve as a switch to turn the SOT device into a stochastic/memristive cell to bridge probabilistic and neuromorphic computing.

A Spin‐Orbit Torque Ratchet at Ferromagnet/Antiferromagnet Interface via Exchange Spring

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Large Spin-Orbit Torque Efficiency Enhanced by Magnetic Structure of Collinear Antiferromagnet IrMn

A Spin‐Orbit Torque Switch at Ferromagnet/Antiferromagnet Interface Toward Stochastic or Memristive Applications via Tailoring Antiferromagnetic Ordering

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Influence of Exchange Bias on Spin Torque Ferromagnetic Resonance for Quantification of Spin-orbit Torque Efficiency

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB

Oscillation of current-induced interfacial spins reorientation in a like-synthetic antiferromagnet/antiferromagnet system

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Highly Efficient Spin-Orbit Torque in a Perpendicular Synthetic Ferrimagnet

Manipulating exchange bias by spin–orbit torque

Spin-orbit Torques in Perpendicularly Magnetized Ir22Mn78/Co20Fe60B20/MgO Multilayer

Spin-orbit Torque from a Ferromagnetic Metal

Field-Free Spin-Orbit Torque-Induced Magnetization Switching in the IrMn/CoTb Bilayers with a Spontaneous In-Plane Exchange Bias

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Electric field control of Néel spin–orbit torque in an antiferromagnet

Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide