Field-Free Switching in Symmetry Breaking Multilayers: The Critical Role of Interlayer Chiral Exchange

Yung-Cheng Li,Yu-Hao Huang,Chao-Chung Huang,Yan-Ting Liu,Chi-Feng Pai

DOI: https://doi.org/10.1103/PhysRevApplied.20.024032

2023-09-12

Abstract:It is crucial to realize field-free, deterministic, current-induced switching in spin-orbit torque magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA). A tentative solution has emerged recently, which employs the interlayer chiral exchange coupling or the interlayer Dzyaloshinskii-Moriya interaction (i-DMI) to achieve symmetry breaking. We hereby investigate the interlayer DMI in a Pt/Co multilayer system with orthogonally magnetized layers, using repeatedly stacked [Pt/Co]n structure with PMA, and a thick Co layer with in-plane magnetic anisotropy (IMA). We clarify the origin and the direction of such symmetry breaking with relation to the i-DMI effective field, and show a decreasing trend of the said effective field magnitude to the stacking number (n). By comparing the current-induced field-free switching behavior for both PMA and IMA layers, we confirm the dominating role of i-DMI in such field-free switching, excluding other possible mechanisms such as tilted-anisotropy and unconventional spin currents that may have arisen from the symmetry breaking.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to achieve field - free and deterministic current - induced magnetization reversal, especially in spin - orbit torque magnetic random - access memory (SOT - MRAM) with perpendicular magnetic anisotropy (PMA). Specifically, the authors explored methods to achieve this goal by introducing inter - layer chiral exchange coupling or inter - layer Dzyaloshinskii - Moriya interaction (i - DMI) to break symmetry. The paper studied i - DMI in Pt/Co multilayer structures in detail and verified its crucial role in field - free magnetization reversal, while excluding the influence of other possible mechanisms, such as tilted anisotropy and unconventional spin currents.

The main contributions of the paper are as follows:
1. **Confirm the role of i - DMI**: Through experimental and theoretical analysis, the dominant role of i - DMI in field - free magnetization reversal was confirmed.
2. **Quantify i - DMI and tilted anisotropy**: The variation trends of the i - DMI effective field and tilted anisotropy with the number of stacked layers were systematically measured.
3. **Current - induced field - free reversal**: The current - induced field - free magnetization reversal behaviors under different numbers of stacked layers were demonstrated, and their mechanisms were analyzed.

These research results are of great significance for the development of high - performance SOT - MRAM, especially for improving its feasibility and reliability in high - density storage applications.