Abstract:Arc discharge is traditionally used to synthesize randomly arranged graphene flakes. In this paper, we substantially modify it into a glow discharge method so that the discharge current is much more reduced. The H2 and/or Ar plasma etching of the graphitic electrode (used to ignite the plasma) is hence much gentler, rendering it possible to grow graphene in thin film format. During the growth at a few mbar, there is no external carbon gas precursor introduced. The carbon atoms and/or carbon containing particles as a result of the plasma etching are emitted in the chamber, some of which undergo gas phase scattering and deposit onto the metallic catalyst substrates (Cu-Ni alloy thin films or Cu foils) as graphene sheets. It is found that high quality monolayer graphene can be synthesized on Cu foil at 900 °C. On Cu-Ni, under the same growth condition, somewhat more bilayer regions are observed. It is observed that the material quality is almost indifferent to the gas ratios, which makes the optimization of the deposition process relatively easy. Detailed study on the deposition procedure and the material characterization have been carried out. This work reveals the possibility of producing thin film graphene by a gas discharge based process, not only from fundamental point of view, but it also provides an alternative technique other than standard chemical vapor deposition to synthesize graphene that is compatible with the semiconductor planar process. As the process uses solid graphite as a source material that is rich in the crust, it is a facile and relatively cheap method to obtain high quality graphene thin films in this respect.

Disorder-free sputtering method on graphene

Low-damage high-throughput grazing-angle sputter deposition on graphene

Minimizing Sputter-Induced Damage During Deposition of WS2 Onto Graphene

First Principles Calculation of Effect of Graphene Coating on Transmission Coefficient of Cu Thin Film with Low Surface Roughness

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

Substrate screening for superclean graphene growth using first-principles calculations

Defect formation in graphene during low-energy ion bombardment

Toward Synthesis of Oxide Films on Graphene with Sputtering Based Processes

Direct Deposition of Uniform High-Κ Dielectrics on Graphene.

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Direct Writing of Graphene Patterns on Insulating Substrates under Ambient Conditions.

Controllable defects in monolayer graphene induced by hydrogen and argon plasma

Clean transfer of graphene for isolation and suspension

Selective Coupling Reaction Inhibits Graphene Defects: Regulating the Orderly Precipitation of Carbon Atoms

Atomic layer deposition of high-quality HFO2 film on graphene using low energy electron beam pretreatment

Shielding technique for deposition of Au electrical contacts on graphene by sputtering

Clean and Efficient Transfer of CVD-grown Graphene by Electrochemical Etching of Metal Substrate

Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Pérot interference

Growth Of Wrinkle-Free And Ultra-Flat Bi-Layer Graphene On Sapphire Substrate Using Cu Sacrificial Layer

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.