Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Growth Of Wrinkle-Free And Ultra-Flat Bi-Layer Graphene On Sapphire Substrate Using Cu Sacrificial Layer

Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Layered Graphene Growth Directly on Sapphire Substrates for Applications

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

A Wrinkling and Etching-Assisted Regrowth Strategy for Large-Area Bilayer Graphene Preparation on Cu

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Single-crystal, large-area, fold-free monolayer graphene

Ultrafast growth of wafer-scale fold-free bilayer graphene

Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Fast synthesis of large-area bilayer graphene film on Cu

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Single- and Bi-Layer Graphene Grown on Sapphire by Molecular Beam Epitaxy

High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

Toward Direct Growth of Ultra‐Flat Graphene

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Crystallization of Copper Films on Sapphire Substrate for Large-Area Single-Crystal Graphene Growth

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD