Abstract:The issues of generating and maintaining carrier spin polarization in semiconductors have attracted intense research efforts, not only due to their importance for future applications in spintronics but also due to the intriguing physics underpinning spin-dependent phenomena. Entering the family of semiconductors that exhibit attractive spin-dependent properties, Ga(In)NAs was most recently found to exhibit strong spin polarization of conducting electrons at room temperature upon N incorporation with an extremely long apparent spin lifetime. In this work we have uncovered the origin of the astonishing effect as being due to strong spin dependent recombination (SDR) via defects, by a combination of optical orientation and optically detected magnetic resonance (ODMR) studies. We were able to identify Ga self-interstitials and an As antisite complex to be the dominant defects participating in the SDR process. The involvement of these defects were unambiguously established by their unique spin-resonance signatures derived from the hyperfine interaction between the localized unpaired electron spin and nuclear spins (I=3/2) of the As and Ga atom - the core of the defects. These defects dominate in carrier capture and recombination leading to the observed strong dynamic polarization of electron spins. Further confirmation was found by the effects of growth conditions and post-growth treatments on the defect density that were closely correlated with the electron spin polarization.

Full-zone optical spin injection in AlxGa1-xAs alloys

Spin-Polarized Injection into A P-Type Gaas Layer from A Co2mnal Injector

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

Spin injection into ferromagnetic Co2MnAl by optical absorption in GaAs

Quasi-equilibrium optical nonlinearities in spin-polarized GaAs

Optically induced nuclear spin polarization in a single GaAs/AlGaAs quantum well probed by a resistance detection method in the fractional quantum Hall regime

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Spin-orbit Interaction in a Dual Gated InAs/GaSb Quantum Well

Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells

Spin Dynamics in GaN/Al0.1Ga0.9N Quantum Well with Complex Band Edge Structure

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co2FeAl/ n-GaAs Heterojunction

Room-temperature Spin-Oriented Photocurrent under Near-Infrared Irradiation and Comparison of Optical Means with Shubnikov De-Haas Measurements in AlxGa1−xN∕GaN Heterostructures

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots

Spin States in InAs/AlSb/GaSb Semiconductor Quantum Wells

Band Hybridization and Spin-Splitting in Inas/Alsb/Gasb Type Ii and Broken-Gap Quantum Wells

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Spin-polarized Quasiparticle Injection Devices Using Au/YBa2Cu3O7/LaAlO3/Nd0.7Sr0.3MnO3 Heterostructures

Spin sensitive bleaching and monopolar spin orientation in quantum wells

Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment