Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Development of 0.5 μm Pixel 3-Wafers Stacked CMOS Image Sensor with through Silicon Deep Contact and In-pixel Cu-Cu Bonding Process

Development of 3-layer stacked global shutter CMOS image sensor with pixel pitch Cu-to-Cu interconnection and high-capacity capacitors

A 64Mpixel CMOS Image Sensor with $0.50 \mu\mathrm{m}$ Unit Pixels Separated by Front Deep-Trench Isolation

Development and Reliability Study of 3D WLCSP for CMOS Image Sensor Using Vertical TSVs with 3:1 Aspect Ratio

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Systematic Experimental Study on Stitching Techniques of CMOS Image Sensors

A High Full Well Capacity CMOS Image Sensor for Space Applications

Design and fabrication of vertically-integrated CMOS image sensors

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

A Review of the Recent Developments in the Fabrication Processes of CMOS Image Sensors for Smartphones

A Three-Wafer-Stacked Hybrid 15-MPixel CIS + 1-MPixel EVS With 4.6-GEvent/s Readout, In-Pixel TDC, and On-Chip ISP and ESP Function

Characterization of SOI pixel sensor using pinned depleted diode structure with AC-coupling on the diode

Copper Bonding Technology in Heterogeneous Integration

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling

Chip-to-wafer (C2W) 3D integration with well-controlled template alignment and wafer-level bonding

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Sub-Micron Electrical Interconnection Enabled Ultra-High I/O Density Wafer Level SiP Integration

A Centripetal Collection Image Sensor(ccis) Based on Back Gate Modulation Achieving 1T Submicron Pixel

Three-Dimensional Stacked-Fin-Cmos Integrated Circuit Using Double Layer Soi Material

Development of two different molding methods in 2.5D package with 20 μm or less fine bump pitch CoW structure