Abstract:CMOS Image Sensors are experiencing significant growth due to their capabilities to be integrated in smartphones with refined image quality. One of the major contributions to the growth of image sensors is the innovation brought about in their fabrication processes. This paper presents a detailed review of the different fabrication processes of the CMOS Image Sensors and its impact on the image quality of smartphone pictures. Fabrication of CMOS image sensors using wafer bonding technologies such as Through Silicon Vias and CuCu hybrid bonding along with their experimental results are discussed. A 2 layer architecture of photodiode and pixel transistors has adopted the 3D sequential integration, by which the wafers are bonded together one after the other in the fabrication process. Electrical characteristics and reliability test results are presented for the former two fabrication processes and the improvements in the pixels performance such as conversion gain, quantum efficiency, full well capacity and dynamic range for the 2 layer architecture are discussed.

What problem does this paper attempt to address?

The paper primarily explores the application and technological advancements of Complementary Metal-Oxide-Semiconductor (CMOS) image sensors in smartphones. Specifically, the article focuses on the following aspects: 1. **Background and Significance**: With the rapid development of the smartphone industry, the quality of image sensors is crucial for enhancing the photography performance of phones. From the initial Charge-Coupled Devices (CCD) to the current CMOS Image Sensors (CIS), technological advancements have significantly improved image quality. 2. **Working Principle**: A brief introduction to the working principle of CIS, which captures photons through photodiodes and converts them into electrical signals, then converts these into digital signals via an Analog-to-Digital Converter (ADC) to form the final image. 3. **Technological Development**: - **Back-Illuminated CMOS Image Sensors**: Addressed the issue of information loss caused by light passing through the metal layer in traditional front-illuminated sensors, thereby improving sensor performance. - **Stacked Back-Illuminated CMOS Image Sensors**: By stacking the pixel part and the logic circuit part, the sensor size is further reduced, and performance metrics are improved. 4. **Key Technological Research**: - **Stacked Back-Illuminated CMOS Image Sensors Using Through-Silicon Vias (TSV) Technology**: By adding temporary storage (such as a DRAM layer), rolling shutter distortion is reduced. The paper also details the structure, manufacturing process, and related testing and validation of TSV. - **Stacked Back-Illuminated CMOS Image Sensors Using Copper-Copper Hybrid Bonding Technology**: Compared to TSV, copper-copper hybrid bonding technology offers higher design flexibility, smaller space requirements, and a simplified manufacturing process. The paper also details the manufacturing process and testing validation of copper-copper hybrid bonding. - **Two-Layer Architecture Stacked Back-Illuminated CMOS Image Sensors**: By placing photodiodes and pixel transistors on different layers, independent optimization of both is achieved, significantly improving key performance parameters such as conversion gain, quantum efficiency, and full well capacity. 5. **Conclusion and Outlook**: According to market forecasts, the demand for CMOS image sensors will continue to grow, mainly due to their widespread application and technological advancements in fields such as smartphones and digital cameras. In summary, this paper aims to review the technological advancements of CMOS image sensors in smartphone applications in recent years, particularly the development of stacked back-illuminated CMOS image sensors. It demonstrates how these technologies have driven the improvement of smartphone image quality and provides an outlook on future market prospects.

A Review of the Recent Developments in the Fabrication Processes of CMOS Image Sensors for Smartphones

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Design and fabrication of vertically-integrated CMOS image sensors

Development of 0.5 μm Pixel 3-Wafers Stacked CMOS Image Sensor with through Silicon Deep Contact and In-pixel Cu-Cu Bonding Process

Microfluidics on lensless, semiconductor optical image sensors: challenges and opportunities for democratization of biosensing at the micro-and nano-scale

Image Sensors and Photodetectors Based on Low‐Carbon Footprint Solution‐Processed Semiconductors

A Review of Optical Sensors in CMOS

Evolution in Lithography Techniques: Microlithography to Nanolithography

CMOS-Compatible Optoelectronic Imagers

A Monolithically Integrated 640 × 512 CMOS-Perovskite Image Sensor

Current Developments of CMOS Image Sensors

FDTD-based optical simulations methodology for CMOS image sensors pixels architecture and process optimization

Image sensors using thin-film absorbers

State of the Art and Future Perspectives in Advanced CMOS Technology

Digital Image Sensor Evolution and New Frontiers

CMOS MEMS: A Key Technology Towards the &#x201c;more Than Moore&#x201D; Era

Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology

A 64Mpixel CMOS Image Sensor with $0.50 \mu\mathrm{m}$ Unit Pixels Separated by Front Deep-Trench Isolation

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Review of Advanced CMOS Technology for Post-Moore Era