Abstract:This paper presents a radiation degradation study on 4-Transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensors designed in standard 0.18-μm technology. The significant contribution of this paper is a systematic evaluation of the X-ray radiation effects on image sensors from the individual device level, to the pixel level and to the level of the entire sensor. The major degradation parameters of the sensor have been analyzed. This paper also includes test structures of varying geometries of in-pixel MOSFETs, pinned photodiodes (PPD), and transfer gates (TG). Characterization was performed during different X-ray doses up to 109 krad. The major degradation-an increase in the dark signal-is analyzed by modifying the TG charge transfer time and integration time. The PPD and the TG are the elements most sensitive to the dark signal of the sensor. The radiation-related dimensional effects on the sensors are also evaluated, which show different results compared to 3T pixels. The transfer-gate length influences the dark signal due to not only the electric field variation in the TG channel but also the local defect generations. In-pixel MOSFETs are used to identify the origin of increases in radiation-induced dark signal. Shallow trench isolation (STI) oxides are responsible for the radiation degradation of the sensor. A slight degradation of the quantum efficiency was observed after radiation in the short-wavelength region. Basic hardening-by-design techniques are also presented. The discussion results of the radiation-related dimensional effects on the sensors together with the STI effect can be used as a guideline for future layout designs of radiation-tolerant sensors. Identifying the pixel dark current origin can help to determine where and how to suppress the pixel dark current generation more effectively.

Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology

Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Effects of Electron and Gamma-Ray Irradiation on Cmos Analog Image Sensors

Electron Radiation Experiment of CMOS Image Sensor

A Radiation-Hardened CMOS Image Sensor With Pixels Exhibiting a Negligibly Small Dark-Level Increase During Ionizing Radiation

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Combined Reactor Neutron Beam and 60co Γ-Ray Radiation Effects on CMOS APS Image Sensors

Radiation effects on a radiation-tolerant CMOS active pixel sensor

Effects of Proton Irradiation on a CMOS Image Sensor

Difference in Electron- and Gamma-Irradiation Effects on Output Characteristic of Color Cmos Digital Image Sensors

High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Radiation Induced Effects in a Monolithic Active Pixel Sensor : The Mimosa8 Chip

Effect of proton radiation on 8T CMOS image sensors for space applications

Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions

Heavy Ion Irradiation Induced Single Particle Displacement Damage in 8T Global Shutter CMOS Image Sensor