Abstract:ErAs:InGaAlBiAs is a semiconductor nanocomposite that is engineered for a photoconductive switch material that is designed for the detection of THz pulses using telecom wavelength excitation. The band engineering allows a bandgap compatible with a 1550 nm pump while having an effective Fermi level deep in the bandgap to have high dark resistance. Terahertz technology has the potential to have a large impact in myriad fields, such as biomedical science, spectroscopy, and communications. Making these applications practical requires efficient, reliable, and low‐cost devices. Photoconductive switches (PCS), devices capable of emitting and detecting terahertz pulses, are a technology that needs more efficiency when working at telecom wavelength excitation (1550 nm) to exploit the advantages this wavelength offers. ErAs:InGaAs is a semiconductor nanocomposite working at this energy; however, high dark resistivity is challenging due to a high electron concentration as the Fermi level lies in the conduction band. To increase dark resistivity, ErAs:InGaAlBiAs material is used as the active material in a PCS detecting Terahertz pulses. ErAs nanoparticles reduce the carrier lifetime to subpicosecond values required for short temporal resolution, while ErAs pins the effective Fermi level in the host material bandgap. Unlike InGaAs, InGaAlBiAs offers enough freedom for band engineering to have a material compatible with a 1550 nm pump and a Fermi level deep in the bandgap, meaning low carrier concentration and high dark resistivity. Band engineering is possible by incorporating aluminum to lift the conduction band edge to the Fermi level and bismuth to keep a bandgap compatible with 1550 nm excitation.

Fermi-Level Pinning in ErAs Nanoparticles Embedded in III-V Semiconductors

Fermi-level pinning in ErAs nanoparticles embedded in III-V semiconductors

Controlling Fermi level pinning in near-surface InAs quantum wells

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Measurement and Modeling of ErAs:In0.53Ga0.47As Nanocomposite Photoconductivity for THz Generation at 1.55 Μm Pump Wavelength

High Efficiency Semimetal/Semiconductor Nanocomposite Thermoelectric Materials

Study of Nanometer-Scale Structures and Electrostatic Properties of InAs Quantum Dots Decorating GaAs/AlAs Core/shell Nanowires

Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm

Quantum confinement and energy filtering effect enhancing the thermoelectric power factor of InGaAs with buried ErAs nanoparticles

Three-dimensional binary superlattices of magnetic nanocrystals and semiconductor quantum dots

Electrical characterization of chemical and dielectric passivation of InAs nanowires

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Electronic properties of InAs/EuS/Al hybrid nanowires

Electronic structure and optical property of semiconductor nanocrystallites

Atom probe composition and in situ electronic structure of epitaxial quantum dot ensembles

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Electrically Active Er Doping in Inas, In0.53ga0.47as, and Gaas

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

High-Resolution Characterization Of Multiferroic Heterojunction Using Aberration-Corrected Scanning Transmission Electron Microscopy

Epitaxial Pb on InAs nanowires

Atomically Thin p-n/p-n Nanodevices by Surface Charge Transfer Doping of Arsenene/Antimonene Heterostructures