Influence of TaN films deposited using different N2 flow rates on the properties of Ta and Cu films in advanced 3D NAND memory

Xianglie Sun,Shuliang Lv,Yuan Li,Chi Huang,Haodong Ma,Jun Luo

DOI: https://doi.org/10.1016/j.mssp.2020.105120

IF: 4.1

2020-08-01

Materials Science in Semiconductor Processing

Abstract:<p>In this work, the properties of Ta and Cu films on TaN films deposited using different N₂ flow rates were explored. The phase identification of Ta, sheet resistance (R_sh) of Ta/TaN stacking films, as well as the N contents within TaN films were characterized using X-ray diffraction (XRD), precession electron diffraction (PED), transmission electron microscope (TEM), four-point probe measurements and X-ray photoelectron Spectroscopy (XPS), respectively. It was found that the N contents within TaN films increase with increased N₂ flow rate, and the formation of low resistivity α-Ta phase was enhanced on such TaN films with higher N contents. Furthermore, how the Ta/TaN stacking films affecting the orientations of Cu seeds and subsequent electroplated Cu films was investigated by X-ray diffraction (XRD) and electron backscattered diffraction (EBSD). It was demonstrated that both Cu seeds and electroplated Cu films possess dominant Cu(111) orientation but this orientation decreases with increased N₂ flow rate during the deposition of TaN.</p>

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied