The 7 × 3 -In surface reconstruction consisting of triple layer on the Si(111) surface

Takayuki Suzuki,Kazuma Yagyu

DOI: https://doi.org/10.1016/j.susc.2023.122434

IF: 1.9

2024-03-01

Surface Science

Abstract:The formation process of the ‘rect’ structure of the Si(111)- 7 × 3 -In surface (referred to as 7 × 3 -rect) is studied in detail by varying the post-heating temperature after indium deposition on the Si(111) substrate. We find that at a low post-heating temperature of about 400 °C, two-dimensional indium islands of tens of nm in size are formed, consisting of triple layer with a 7 × 3 -In reconstruction different from the 7 × 3 -rect reconstruction (referred to as 7 × 3 -TL). Although the atomic arrangements in the topmost indium layers of the 7 × 3 -TL and the 7 × 3 -rect reconstructions are considered to be nearly the same, their dIt/dVs(Vs) curves look different from each other. Surface defects in the disordered domain around the 7 × 3 -TL islands originate from the partially remaining 7 × 7 reconstruction at the interface between the Si substrate and the indium layers. Additional indium atoms evaporated on the 7 × 3 -rect surface with the 7 × 3 -TL islands form flat wide single indium layers incorporating the 7 × 3 -TL islands. However, the layers do not adopt the 7 × 3 -TL reconstruction, but the incommensurate ∼5.4×∼5.4 reconstruction.

chemistry, physical,physics, condensed matter