Abstract:Antimony chalcogenides emerge as a type of efficient material for solar cells. In particular, antimony sulfide-selenide (SbSSe) has attracted significant interests based on their simple preparation, excellent photoelectric performance, and tunable bandgaps. In this study, by applying energy-band engineering technologies, we achieved carrier transport balance and light absorption balance for SbSSe single- and triple-junction solar cells, respectively. First in a single junction solar cell, the photoelectric conversion efficiency (PCE) of SbSSe solar cells is improved from 13.14% to 16.16% with a front-gradient Se content structure compared to a non-gradient Se content SbSSe solar cell. This improvement is attributed to the additional electric field induced by such a gradient bandgap, promoting the carrier motion. Consequently, the balance of carrier transport is realized by adjusting the drift velocities of holes and electrons simultaneously, thereby surpassing carrier recombination and improving the device parameters of short-circuit current density (Jsc) and fill factor (FF). In a next step, an SbSSe of advanced gradient bandgap has been applied as the absorber layer of middle-cell in an antimony chalcogenide based triple-junction solar cell. Based on the high Jsc and FF advantages of SbSSe sub-cells with front-gradient Se content structure, the uniform absorption of sunlight in each sub-cell and current matching of tandem solar cells could be easily realized. Eventually, the PCE of the triple-junction solar cell exhibits an enhancement from 17.34% to 19.51%. Our results demonstrate that the application of energy-band engineering technology can effectively improve device performance, providing theoretical guidance for the refined design and nanomanufacturing development of antimony chalcogenide solar cells.

Suppressing the Trapping Process by Interfacial Charge Extraction in Antimony Selenide Heterojunctions

Engineering the charge extraction and trap states of Sb 2 S 3 solar cells

Suppressing Buried Interface Nonradiative Recombination Losses Towards High‐efficiency Antimony Triselenide Solar Cells

In Situ Investigation of Interfacial Properties of Sb2Se3 Heterojunctions

Ultrafast Self-Trapping of Photoexcited Carriers Sets the Upper Limit on Antimony Trisulfide Photovoltaic Devices

Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells

Interfacial engineering for high efficiency solution processed Sb2Se3 solar cells

An effective engineering with simultaneous carrier density enhancement and interface optimization enables efficient Sb2Se3 solar cells

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

Interface engineering of antimony selenide solar cells: A review on the optimization of energy band alignments

Se-Elemental Concentration Gradient Regulation for Efficient Sb2(S,Se)3 Solar Cells With High Open-Circuit Voltages

Space-Charging Interfacial Layer by Illumination for Efficient Sb 2 S 3 Bulk-Heterojunction Solar Cells with High Open-Circuit Voltage

Ultrafast Carrier Kinetics at Surface and Interface of Sb2Se3 Film by Transient Reflectance

Optimizing Crystal Orientation and Defect Mitigation in Antimony Selenide Thin-Film Solar Cells through Buffer Layer Energy Band Adjustment

Heterogeneous Nucleation Regulation Amends Unfavorable Crystallization Orientation and Defect Features of Antimony Selenosulfide Film for High‐Efficient Planar Solar Cells

Enhanced charge carrier transport via efficient grain conduction mode for Sb2Se3 solar cell applications

Sputtered and Selenized Sb2Se3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 Mv

Confined‐space selenium assisted tellurization post‐treatment strategy for efficient full‐inorganic Sb2S3 thin film solar cells

Coupled Electronic and Anharmonic Structural Dynamics for Carrier Self‐Trapping in Photovoltaic Antimony Chalcogenides

Gradient bandgap modification for highly efficient carrier transport in antimony sulfide-selenide tandem solar cells

Crystal Growth Promotion and Defect Passivation by Hydrothermal and Selenized Deposition for Substrate-Structured Antimony Selenosulfide Solar Cells