Deposition and Characterization of TiZrV Getter Films
Bo Zhang,Yong Wang,Wei Wei,Le Fan,Xiangtao Pei,Yuanzhi Hong,Jianping Wang,Yufang Zhang,Weimin Li
DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.08.03
2012-01-01
Abstract:The TiZnV getter films were deposited by magnetron sputtering, in a lab-built reactor, on the inner walls of the stainless steel pipe. The properties of the TiZrV coating, including the second electron yield, photon stimulated desorption, and gas absorption, were characterized. The results show that the TiZnV films bring about significant improvements. For instance, after being heated in situ at 200°C for 2 h, the SEY peak decreased from 2.03 to 1.55. When it came to the residue gases, the TiZrV coating reduced the PSD nearly by two orders of magnitude after heating at 200°C for 24 h. The TiZrV coatings most effectively absorb CO and H 2. Under the given activation condition, the pumping speed for CO is one order of magnitude higher than that for H 2, whereas the pumping capacity for CO is two orders of magnitude lower than that for H 2. Moreover, the pumping performance of the TiZrV films can be improved by increasing the heating temperature and heating time.